Publications

• Article dans une revue

High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 µm

Patrick Mounaix, Marc Tondusson, Nicolas Chimot, Juliette Mangeney, Karine Blary, Jean-Francois Lampin

The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth.…

Electronics Letters, 2006, 42 (15), pp.879-880. ⟨10.1049/el:20061529⟩. ⟨hal-00162819⟩

• Autre publication scientifique

Jonctions nanométriques à base d'électrodes ou de nanofils en siliciure de titane

T. Soubiron

2006. ⟨hal-00162822⟩

• Communication dans un congrès

Efficient spreading code allocation strategy for a downlink MC-CDMA system in a time varying frequency selective channel

H. El Ghazi, C. Garnier, Y. Delignon

2006, 5 pp. ⟨hal-00154925⟩

• Article dans une revue

Inhomogeneous spin reorientation transition (SRT) in giant magnetostrictive TbCo2/FeCo multilayers

A. Klimov, Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod

IEEE Transactions on Magnetics, 2006, 42, pp.3090-3092. ⟨hal-00138596⟩

• Article dans une revue

Resonant solutions in wave phase conjugation induced by a limited magneto-acoustic conjugator

A. Merlen, Q. Zhang

Journal of the Acoustical Society of America, 2006, 119, pp.3637-3648. ⟨hal-00138594⟩

• Communication dans un congrès

Vibrotactile using micromachined electromagnetic actuators array

Abdelkrim Talbi, O. Ducloux, Nicolas Tiercelin, Y. Deblock, Philippe Pernod, Vladimir Preobrazhensky

Proceedings of EuroHaptics 2006 Conference, 2006, Paris, France. ⟨hal-00241072⟩

• Article dans une revue

Nouvelles sources microfabriquées de nano-ESI optimisées pour l’analyse protéomique

S. Arscott, Christian Rolando, Séverine Le Gac

La Houille Blanche - Revue internationale de l'eau, 2006. ⟨hal-02347588⟩

• Communication dans un congrès

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn

IEEE International Electron Devices Meeting, IEDM 2006, 2006, United States. pp.673-676, ⟨10.1109/IEDM.2006.346935⟩. ⟨hal-00247419⟩

• Article dans une revue

Terahertz detection by GaN/AlGaN transistors

Abdelouahad El Fatimy, Stephane Boubanga Tombet, Frederic Teppe, Wojciech Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Christophe Gaquière, D. Theron, A. Cappy

Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5 THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300 K For the lowest temperatures, a…

Electronics Letters, 2006, 42, pp.1342-1344. ⟨10.1049/cl:20062452⟩. ⟨hal-00540638⟩

• Chapitre d'ouvrage

Electrical, morphological and electromechanical properties of conductive-polymer fibres (yarns)

B. Kim, V. Koncar, C. Dufour

Mattila H.R. Intelligent Textiles and Clothing, Woodhead Publishing Ltd, Cambridge, UK, pp.308-323, 2006. ⟨hal-00577013⟩