Publications

• Article dans une revue

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Alberto Santarelli, Valeria Di Giacomo, Antonio Raffo, Fabio Filicori, Giorgio Vannini, Raphaël Aubry, Christophe Gaquière

A new empirical nonlinear model of GaN-based electron devices is presented in the article. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model…

International Journal of RF and Microwave Computer-Aided Engineering, 2008, 18, pp.507-516. ⟨10.1002/mmce.20326⟩. ⟨hal-00357800⟩

• Article dans une revue

Time-resolved interference experiments in a solid state environment

S. Gustavsson, R. Leturcq, M. Studer, T. Ihn, K. Ensslin, D.C. Driscoll, A.C. Gossard

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.1044-1047. ⟨10.1016/j.physe.2007.09.209⟩. ⟨hal-00357782⟩

• Article dans une revue

193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

Ali Soltani, Hassan Ali Barkad, Maghnia Mattalah, Brahim Benbakhti, Jean-Claude de Jaeger, Y.M. Chong, Y.S. Zou, W.J. Zhang, S.T. Lee, Ali Benmoussa, B. Giordanengo, Jean-François Hochedez

Applied Physics Letters, 2008, 92 (5), pp.053501. ⟨10.1063/1.2840178⟩. ⟨hal-00357793⟩

• Article dans une revue

Crosstalk measurement of DOS-like switch using InP narrow deep-etched waveguides

Marie Lesecq, Maxime Beaugeois, Sophie Maricot, Jean-Pierre Vilcot

We report on the performance of an optical switch based on the use of narrow deep-etched InP waveguides. A DOS-like structure has been designed and fabricated. First characterization results are reported. They show an optical crosstalk value close to -20dB.

Optics Express, 2008, 16, pp.5181-5185. ⟨10.1364/OE.16.005181⟩. ⟨hal-00357303⟩

• Article dans une revue

Fundamental studies in nanosciences at the Institute of Electronics, Microelectronics, and Nanotechnology (IEMN)

Guy Allan, Sophie Barbet, Yannick Coffinier, Christophe Delerue, D. Deresmes, Mamadou Diarra, Heinrich Diesinger, B. Grandidier, Lionel Marcon, Thierry Melin, Olexa Melnyk, Didier Stiévenard, Ludger Wirtz, Mariusz Zdrojek

This paper gives an overview over the fundamental research in nanosciences at the Institute of Electronics, Microelectronics and Nanotechnology (IEMN). We present some highlights from the numerical simulation of the electronic structure of nanowires and nanotubes, the charge spectroscopy of Si…

International Journal of Nanotechnology, 2008, 5, 631-648, Special Issue on Nanotechnology in France. Part I : C'nano Nord-Ouest. ⟨10.1504/IJNT.2008.018686⟩. ⟨hal-00357348⟩

• Article dans une revue

Power dissipated measurement of an ultrasonic generator in a viscous medium by flowmetric method

Valérie Mancier, Didier Leclercq

Ultrasonics Sonochemistry, 2008, 15, pp.973-980. ⟨10.1016/j.ultsonch.2008.03.005⟩. ⟨hal-00356988⟩

• Article dans une revue

Continuous terahertz-wave generation using a monolithically integrated horn antenna

Emilien Peytavit, Alexandre Beck, Tahsin Akalin, Jean-Francois Lampin, Francis Hindle, Chun Yang, Gaël Mouret

Applied Physics Letters, 2008, 93, pp.111108-1-3. ⟨10.1063/1.2983741⟩. ⟨hal-00356945⟩

• Article dans une revue

Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates

Abdelkader Aissat, Said Nacer, Messaoud Bensebti, Jean-Pierre Vilcot

In this paper, we study the effect of the incorporation of nitrogen in strained GaInAs quantum well structures. We evaluate the influence of nitrogen on the conduction band energy by using the band anticrossing model. The incorporation of nitrogen appears to decrease the bandgap energy and increase…

Microelectronics Journal, 2008, 39, pp.63-66. ⟨10.1016/j.mejo.2007.10.014⟩. ⟨hal-00357304⟩

• Article dans une revue

Low-temperature grown GaAsSb with sub-picosecond photocarrier lifetime for continuous-wave terahertz measurements

J. Sigmund, Jean-Francois Lampin, V. Ivannikov, C. Sydlo, M. Feiginov, D. Pavlidis, P. Meissner, H.L. Hartnagel

IEICE Transactions on Electronics, 2008, E91-C, pp.1058-1062. ⟨10.1093/ietele/e91-c.7.1058⟩. ⟨hal-00356957⟩

• Article dans une revue

Comparison between the noise performance of double- and single-gate InP-based HEMTs

B.G. Vasallo, Nicolas Wichmann, S. Bollaert, Yannick Roelens, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

IEEE Transactions on Electron Devices, 2008, 55, pp.1535-1540. ⟨10.1109/TED.2008.921982⟩. ⟨hal-00356667⟩