Publications

• Article dans une revue

Integrated 3D silicon electrodes for electrochemical sensing in microfluidic environments : application to single cell characterization

V. Senez, E. Lennon, S. Ostrovidov, T. Yamamoto, H. Fujita, Y. Sakai, T. Fujii

IEEE Sensors Journal, 2008, 8, pp.548-557. ⟨10.1109/JSEN.2008.918948⟩. ⟨hal-00356897⟩

• Article dans une revue

Molecular-scale electronics

D. Vuillaume

Comptes Rendus. Physique, 2008, 9, pp.78-94. ⟨10.1016/j.crhy.2007.10.014⟩. ⟨hal-00357286⟩

• Article dans une revue

Resistivity and surface states density of n and p type silicon nanowires

Francois Vaurette, J.P. Nys, D. Deresmes, B. Grandidier, D. Stiévenard

Journal of Vacuum Science and Technology, 2008, 26, pp.945-948. ⟨10.1116/1.2908438⟩. ⟨hal-00357381⟩

• Article dans une revue

Effects of annealing temperature and heat-treatment duration on electrical properties of sol–gel derived indium-tin-oxide thin films

Arnaud Beaurain, D. Luxembourg, C. Dufour, Vladan Koncar, Bruno Capoen, Mohamed Bouazaoui

Transparent indium tin oxide (ITO) thin films have been deposited by the dip-coating process on silica substrates using solutions of 2,4-pentanedione, ethanol, indium and tin salts. The films have been first dried in air at 260 °C for 10 min and then annealed in a reducing atmosphere at different…

Thin Solid Films, 2008, 516, pp.4102-4106. ⟨10.1016/j.tsf.2007.10.021⟩. ⟨hal-00357288⟩

• Article dans une revue

Passive photonic components using InP optical wire technology

Marie Lesecq, Sophie Maricot, Jean-Pierre Vilcot, Maxime Beaugeois

The authors present the design, fabrication and characterisation of passive photonic components using InP optical wire technology. These components are straight and curved waveguides as well as Y-junctions. Their ultimate use is to be integrated within active nanophotonic functions and this is…

IET Optoelectronics, 2008, 2, pp.69-75. ⟨10.1049/iet-opt:20060104⟩. ⟨hal-00357302⟩

• Article dans une revue

Thermo-opto-mechanical properties of AlN nanostructures : a promising material for NEMS applications

G. Guisbiers, L. Buchaillot

Journal of Physics D: Applied Physics, 2008, 41, pp.172001-1-4. ⟨10.1088/0022-3727/41/17/172001⟩. ⟨hal-00357283⟩

• Article dans une revue

Characterization of nanogap chemical reactivity using peptide-capped gold nanoparticles and electrical detection

L. Marcon, D. Stievenard, O. Melnyk

Bioconjugate Chemistry, 2008, 19, pp.802-805. ⟨10.1021/bc8000084⟩. ⟨hal-00357336⟩

• Article dans une revue

Mosaicity and stress effects on luminescence properties of GaN

A. Toure, A. Bchetnia, T.A. Lafford, Z. Benzarti, I. Halidou, Z. Bougrioua, B. El Jani

Physica Status Solidi A (applications and materials science), 2008, 205, pp.2042-2046. ⟨10.1002/pssa.200778869⟩. ⟨hal-00357274⟩

• Article dans une revue

Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current-voltage characteristics

A.K. Chauhan, D.K. Aswal, S.P. Koiry, S.K. Gupta, J.V. Yakhmi, C. Sürgers, David Guérin, S. Lenfant, D. Vuillaume

Applied physics. A, Materials science & processing, 2008, 90, pp.581-589. ⟨10.1007/s00339-007-4336-7⟩. ⟨hal-00357287⟩

• Article dans une revue

Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

M. Mattalah, A. Telia, A. Soltani, Jean-Claude de Jaeger, P. Thevenin, A. Bath, B. Akkal, H. Abid

Thin Solid Films, 2008, 516, pp.4122-4127. ⟨10.1016/j.tsf.2007.10.009⟩. ⟨hal-00357796⟩