Publications

• Article dans une revue

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

L. Nougaret, H. Happy, Gilles Dambrine, Vincent Derycke, J.P. Bourgoin, A.A. Green, M.C. Hersam

This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80…

Applied Physics Letters, 2009, 94 (24), pp.243505. ⟨10.1063/1.3155212⟩. ⟨hal-00469685⟩

• Article dans une revue

Phonon surface mapping of graphite : disentangling quasi-degenerate phonon dispersions

A. Gruneis, J. Serrano, A. Bosak, M. Lazzeri, S.L. Molodtsov, L. Wirtz, Claudio Attaccalite, M. Krisch, A. Rubio, Francesco Mauri, T. Pichler

The two-dimensional mapping of the phonon dispersions around the K point of graphite by inelastic x-ray scattering is provided. The present work resolves the longstanding issue related to the correct assignment of transverse and longitudinal phonon branches at K. We observe an almost degeneracy of…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 80, pp.085423-1-5. ⟨10.1103/PhysRevB.80.085423⟩. ⟨hal-00473343⟩

• Article dans une revue

Magnetically tunable left handed metamaterials by liquid crystal orientation

F. Zhang, L. Kang, Q. Zhao, J. Zhou, X. Zhao, D. Lippens

Optics Express, 2009, 17, pp.4360–4366. ⟨10.1364/OE.17.004360⟩. ⟨hal-00471881⟩

• Article dans une revue

Light coupling between photonic crystal and standard photonic waveguides in a compact photonic integrated circuitry using 2D FDTD

S. Haxha, Iyad Dayoub, F. Abdelmalek, W. Aroua, J. Trombi, H. Bouchriha

Open Optics Journal, 2009, 3, pp.44-51. ⟨10.2174/1874328500903010044⟩. ⟨hal-00471828⟩

• Article dans une revue

Multi-service applications on high modal bandwidth glass multimode fiber

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, P.A. Rolland

Electronics Letters, 2009, 45, pp.951-952. ⟨10.1049/el.2009.1584⟩. ⟨hal-00471848⟩

• Article dans une revue

Gate-recess technology for InAs/AlSb HEMTs

E. Lefebvre, M. Malmkvist, M. Borg, L. Desplanque, X. Wallart, Gilles Dambrine, S. Bollaert, J. Grahn

IEEE Transactions on Electron Devices, 2009, 56, pp.1904-1911. ⟨10.1109/TED.2009.2026123⟩. ⟨hal-00471908⟩

• Article dans une revue

Improved characterization methology for MOSFETs up to 220 GHz

N. Waldhoff, C. Andrei, D. Gloria, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine

IEEE Transactions on Microwave Theory and Techniques, 2009, 57, pp.1237-1243. ⟨10.1109/TMTT.2009.2017359⟩. ⟨hal-00471808⟩

• Article dans une revue

Novel bondpad report process for III-V semiconductor devices using full HSQ properties

Malek Zegaoui, Nargess Choueib, P. Tilmant, Marc François, Christiane Legrand, Jean Chazelas, Didier Decoster

This paper reports on an easy and quick planarization and passivation technique of III-V compound semiconductor compatible with nanoscale devices. Vertical etching requires good sidewalls passivation to reduce drastically the leakage current and to obtain a good planarization of the devices for…

Microelectronic Engineering, 2009, 86 (1), pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩. ⟨hal-00473043⟩

• Article dans une revue

Recent progress in high-speed silicon-based optical modulators [Invited paper]

D. Marris-Morini, L. Vivien, G. Rasigade, J.M. Fedeli, E. Cassan, Xavier Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, Mathieu Halbwax, S. Laval

Proceedings of the IEEE, 2009, 97, pp.1199-1215. ⟨10.1109/JPROC.2009.2015337⟩. ⟨hal-00473046⟩

• Article dans une revue

Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors

C. Celle, C. Suspene, J.P. Simonato, S. Lenfant, M. Ternisien, D. Vuillaume

Organic Electronics, 2009, 10, pp.119-126. ⟨10.1016/j.orgel.2008.10.007⟩. ⟨hal-00472766⟩