Publications

Affichage de 10721 à 10730 sur 16100


  • Communication dans un congrès

Fabrication and characterization of passive and active devices based on epitaxially grown graphene

N. Meng, H. Happy, D. Vignaud, J. Ferrer-Fernandez

Tenth International Conference on the Science and Application of Nanotubes, NT09, 2009, Beijing, China. ⟨hal-00574840⟩

  • Article dans une revue

STM/STS investigation of silicon adatoms

R. Stiufiuc, B. Grandidier, G. Stiufiuc

Optoelectronics and Advanced Materials - Rapid Communications, 2009, 3, pp.1005-1007. ⟨hal-00473364⟩

  • Article dans une revue

Molecular dynamics simulations of the solid phase epitaxy of Si : growth mechanism and orientation effects

E. Lampin, Christophe Krzeminski

Journal of Applied Physics, 2009, 106, pp.063519-1-8. ⟨10.1063/1.3211972⟩. ⟨hal-00471990⟩

  • Article dans une revue

Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

I. Iniguez de La Torre, T. Gonzalez, D. Pardo, C. Gardes, Yannick Roelens, S. Bollaert, J. Mateos

Journal of Applied Physics, 2009, 105 (9), pp.094504. ⟨10.1063/1.3124363⟩. ⟨hal-00471809⟩

  • Article dans une revue

Enhancement in nanoscale electrical properties of lead zirconic titanate island fabricated by focused ion beam

R.H. Liang, Denis Remiens, D. Deresmes, Caroline Soyer, David Troadec, X.L. Dong, L.H. Yang, Rachel Desfeux, Antonio Da Costa, Jean-François Blach

Journal of Applied Physics, 2009, 105 (4), pp.044101. ⟨10.1063/1.3073892⟩. ⟨hal-00473718⟩

  • Article dans une revue

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

N. Reckinger, X.H. Tang, V. Bayot, Dmitri Yarekha, S. Godey, Emmanuel Dubois, X. Wallart, G. Larrieu, A. Laszcz, J. Ratajczak, P.J. Jacques, J.P. Raskin

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to decrease substantially from 0.43 eV for as-deposited samples to reach its lowest value, 0.28 eV, at 450°C. By x-ray diffraction, high…

Applied Physics Letters, 2009, 94 (19), pp.191913. ⟨10.1063/1.3136849⟩. ⟨hal-00471985⟩

  • Article dans une revue

Acoustic wave transmission through piezoelectric structured materials

M. Lam, E. Le Clezio, H. Amorin, M. Alguero, J. Holc, M. Kosec, Anne-Christine Hladky, G. Feuillard

Ultrasonics, 2009, 49, pp.424-431. ⟨10.1016/j.ultras.2008.11.001⟩. ⟨hal-00469003⟩

  • Article dans une revue

Train-to-wayside wireless communication in tunnel using ultra-wide-band and time reversal

H. Saghir, M. Heddebaut, F. Elbahhar, Jean-Michel Rouvaen, Atika Rivenq, J.P. Ghys

Transportation research. Part C, Emerging technologies, 2009, 17, pp.81-97. ⟨10.1016/j.trc.2008.09.003⟩. ⟨hal-00471843⟩

  • Article dans une revue

Structural, electrical and piezoelectric properties of LiNbO3 thin films for surface acoustic wave resonators applications

V. Edon, Denis Remiens, S. Saada

Applied Surface Science, 2009, 256, pp.1455-1460. ⟨10.1016/j.apsusc.2009.09.002⟩. ⟨hal-00473734⟩