Publications

• Article dans une revue

Deep level investigation by capacitance and conductance transient spectroscopy in AlGaN/GaN/SiC HEMTs

M. Gassoumi, B. Grimbert, M.A. Poisson, Julien Fontaine, M.A. Zaidi, Christophe Gaquière, H. Maaref

Journal of Optoelectronics and Advanced Materials, 2009, 11, pp.1713-1717. ⟨hal-00473671⟩

• Article dans une revue

Electron transport properties of gallium nitride for microscopic power device modelling

Brahim Benbakhti, Michel Rousseau, Ali Soltani, Jean-Claude de Jaeger

The design of power GaN devices has to take into account the impact of temperature on device materials due to highly dissipated power and a consequent large self-heating. The accurate knowledge of transport properties as a function of the lattice temperature is essential in order to make a good…

Journal of Physics: Conference Series, 2009, 193, pp.012005-1-4. ⟨10.1088/1742-6596/193/1/012005⟩. ⟨hal-00473639⟩

• Article dans une revue

Extension of the "equivalent cable bundle method" for modeling electromagnetic emissions of complex cable bundles

Guillaume Andrieu, Alain Reineix, X. Bunlon, J.P. Parmantier, L. Kone, B. Demoulin

IEEE Transactions on Electromagnetic Compatibility, 2009, 51, pp.108-118. ⟨10.1109/TEMC.2008.2007803⟩. ⟨hal-00473686⟩

• Article dans une revue

Coupled analysis of high and low frequency resonant ultrasound spectroscopy : application to the detection of defects in ceramic balls

F. Deneuville, Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot, Mohamed Ourak, S. Desvaux

Review of Scientific Instruments, 2009, 80, pp.054903-1-6. ⟨10.1063/1.3142462⟩. ⟨hal-00473705⟩

• Communication dans un congrès

Piezoelectric coefficients measured by picosecond ultrasonics

P. Emery, Arnaud Devos, N. Ben Hassine, E. Defay

IEEE International Ultrasonics Symposium, 2009, Italy. pp.2178-2180, ⟨10.1109/ULTSYM.2009.5441963⟩. ⟨hal-00474456⟩

• Communication dans un congrès

Investigaton on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths

Alexandre Beck, Olivier Offranc, Mohammed Zaknoune, Emilien Peytavit, Guillaume Ducournau, Tahsin Akalin, X. Wallart, Jean-Francois Lampin

We report our investigation on realization of 1.55 mum wavelengths sensitive photomixer based on GaAsSb/InP uni-travelling-carrier photodiode. The epitaxial structure and technological steps are described.

34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Sep 2009, Busan, South Korea. pp.1-2, ⟨10.1109/ICIMW.2009.5324658⟩. ⟨hal-00474427⟩

• Communication dans un congrès

Microwave power performance on AlGaN/GaN HEMTs on composite substrate

Jean-Claude de Jaeger, Virginie Hoel, N. Defrance, Y. Douvry, Christophe Gaquière, M.A. Poisson, J. Thorpe, H. Lahreche, R. Langer

4th European Microwave Integrated Circuits Conference, EuMIC 2009, 2009, Italy. pp.144-147. ⟨hal-00474461⟩

• Article dans une revue

Orbital and charge-resolved polaron states in CdSe dots and rods probed by scanning tunneling spectroscopy

Z. Sun, I. Swart, C. Delerue, D. Vanmaekelbergh, P. Liljeroth

Physical Review Letters, 2009, 102, pp.196401-1-4. ⟨10.1103/PhysRevLett.102.196401⟩. ⟨hal-00473341⟩

• Article dans une revue

Short- and long-range sensing using plasmonic nanostrucures : experimental and theoretical studies

E. Galopin, A. Noual, J. Niedziolka-Jonsson, M. Jonsson-Nedziolka, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Rabah Boukherroub, Sabine Szunerits

Journal of Physical Chemistry C, 2009, 113, pp.15921-15927. ⟨10.1021/jp905154z⟩. ⟨hal-00473362⟩

• Article dans une revue

Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures

T. Sadi, F. Dessenne, Jean-Luc Thobel

We apply a three-dimensional (3D) semiclassical ensemble Monte Carlo simulation method to study T-branch junctions based on InGaAs/InAlAs heterostructures and obtain an accurate insight into the physics behind the operation of such structures. Electron transport in these devices is investigated and…

Journal of Applied Physics, 2009, 105 (5), pp.0537075. ⟨10.1063/1.3087703⟩. ⟨hal-00473651⟩