Publications

• Article dans une revue

Contactless microwave technique based on a spread-loss model for dielectric materials characterization

Kamel Haddadi, M.M. Wang, O. Benzaim, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2009, 19, pp.33-35. ⟨10.1109/LMWC.2008.2008573⟩. ⟨hal-00472450⟩

• Article dans une revue

Carrier dynamics in Fe-doped GaN epilayers

R. Aleksiejunas, M. Azize, Z. Bougrioua, T. Malinauskas, S. Nargelas, K. Jarasiunas

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S723-S726. ⟨10.1002/pssc.200880832⟩. ⟨hal-00472681⟩

• Article dans une revue

Nanowire biocompatibility in the brain - Looking for a needle in a 3D stack

Cecilia Eriksson-Linsmeier, Christelle Prinz, Lina M. E. Pettersson, Philippe Caroff, Lars Samuelson, Jens Schouenborg, Lars Montelius, Nils Danielsen

We investigated the brain-tissue response to nanowire implantations in the rat striatum after 1, 6, and 12 weeks using immunohistochemistry. The nanowires could be visualized in the scar by confocal microscopy (through the scattered laser light). For the nanowire-implanted animals, there is a…

Nano Letters, 2009, 9 (12), pp.4184–4190. ⟨10.1021/nl902413x⟩. ⟨hal-00471929⟩

• Article dans une revue

In-plane polarities of nonpolar wurtzite epitaxial films deposited on m- and r-plane sapphire substrates

Philippe Vennéguès, Tiankai Zhu, Z. Bougrioua, Denis Martin, J. Zuniga-Perez, Nicolas Grandjean

The in-plane polarities of GaN and ZnO non-polar films deposited on r - and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in the first case and nonpolar in the second…

Japanese Journal of Applied Physics Part 1: Regular Papers and Short Notes and Review Papers, 2009, 48 (9), pp.090211-1-3. ⟨10.1143/JJAP.48.090211⟩. ⟨hal-00472455⟩

• Article dans une revue

Modeling of three-dimensional diffusible resistors with the one-dimensional tube multiplexing method

J.N. Gillet, J.Y. Degorce, M. Meunier

Semiconductor Science and Technology, 2009, 24, pp.095010-1-11. ⟨10.1088/0268-1242/24/9/095010⟩. ⟨hal-00473096⟩

• Article dans une revue

Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin force microscopy

David Brunel, D. Deresmes, Thierry Melin

We use Kelvin force microscopy (KFM) to study the electrostatic properties of single-walled carbon nanotube field effect transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete…

Applied Physics Letters, 2009, 94, pp.223508-1-3. ⟨10.1063/1.3148364⟩. ⟨hal-00473086⟩

• Article dans une revue

Deep level investigation by capacitance and conductance transient spectroscopy in AlGaN/GaN/SiC HEMTs

M. Gassoumi, B. Grimbert, M.A. Poisson, Julien Fontaine, M.A. Zaidi, Christophe Gaquière, H. Maaref

Journal of Optoelectronics and Advanced Materials, 2009, 11, pp.1713-1717. ⟨hal-00473671⟩

• Communication dans un congrès

Microwave power performance on AlGaN/GaN HEMTs on composite substrate

Jean-Claude de Jaeger, Virginie Hoel, N. Defrance, Y. Douvry, Christophe Gaquière, M.A. Poisson, J. Thorpe, H. Lahreche, R. Langer

4th European Microwave Integrated Circuits Conference, EuMIC 2009, 2009, Italy. pp.144-147. ⟨hal-00474461⟩

• Communication dans un congrès

Electrode sizing for guided wave resonator above a Bragg mirror

I. Kone, A. Reinhardt, F. Domingue, Bertrand Dubus, L. Buchaillot, F. Casset, J.F. Carpentier, M. Aid

63rd IEEE International Frequency Control Symposium, joint with 23rd European Frequency and Time Forum, EFTF-IFCS 2009, 2009, France. pp.904-907, ⟨10.1109/FREQ.2009.5168318⟩. ⟨hal-00474071⟩

• Article dans une revue

Electrons in quantum dots : one by one

S. Gustavsson, R. Leturcq, T. Ihn, K. Ensslin, A.C. Gossard

A quantum point contact placed close to a quantum dot can be used as a charge detector with time resolution to monitor the charge flow on the level of individual electrons. The current through the quantum point contact may take two possible values corresponding to the situation of an additional…

Journal of Applied Physics, 2009, 105 (12), pp.122401. ⟨10.1063/1.3116227⟩. ⟨hal-00473401⟩