Publications

Affichage de 10341 à 10350 sur 16255


  • Communication dans un congrès

The use of Langmuir-Blodgett films of PbSe/CdSe quantum dots for the determination of the PbSe/CdSe band alignment

Y. Justo, Justin Habinshuti, B. de Geyter, B. Grandidier, Z. Hens

11th Trends in Nanotechnology International Conference, TNT2010, 2010, Braga, Portugal. ⟨hal-00574419⟩

  • Article dans une revue

Influence of the selectively implanted collector integration on 400 GHz fmax Si/SiGe:C HBTs

Thomas Lacave, Pascal Chevalier, Yves Campidelli, Linda Depoyan, Ludovic Berthier, Frédéric André, Michel Buczko, Gregory Avenier, Christophe Gaquière, Alain Chantre

Optimization of SiGe HBT performances towards very high cut-off frequencies fT and fMAX requires high collector doping level together with low collector/base junction capacitance CBC. This compromise is usually achieved by localizing a dedicated collector implant (so-called SIC implant) under the…

ECS Transactions, 2010, 33 (6), pp.331-335. ⟨10.1149/1.3487563⟩. ⟨hal-00550006⟩

  • Communication dans un congrès

[Invited] Conducting IPNs based electrochemical actuators : from polymer chemistry to biomimetic integration

F. Vidal, Cedric Plesse, Alexandre Khaldi, N. Festin, P. Pirim, Eric Cattan, D. Teyssie, C. Chevrot

Stuttgart NanoDays 2010, 2010, Stuttgart, Germany. ⟨hal-00909175⟩

  • Communication dans un congrès

Slow-wave shielded coplanar striplines for UWB filtering applications

M. Abdelaziz, Florence Podevin, A. Safwat, Anne-Laure Franc, Emmanuel Pistono, N. Corrao, A. Vilcot, P. Ferrari

Slow-wave shielded coplanar striplines for UWB filtering applications, Dec 2009, New Delhi, India. ⟨hal-00602887⟩

  • Article dans une revue

Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)

Jinquan Cheng, Thomas Aviles, Ahiram El Akra, C. Bru-Chevallier, Ludovic Largeau, Gilles Patriarche, Philippe Regreny, A. Benamrouche, Y. Robach, Guy Hollinger, Guillaume Saint-Girons

The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13 K, the photoluminescence yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of nonradiative mechanisms for…

Applied Physics Letters, 2009, 95 (23), ⟨10.1063/1.3273850⟩. ⟨hal-01901801⟩