Publications

• Communication dans un congrès

Molecular relaxation dynamics in organic monolayer junctions

N. Clement, S. Pleutin, David Guérin, D. Cahen, D. Vuillaume

10th European Conference on Molecular Electronics, ECME 2009, 2009, Copenhagen, Denmark. ⟨hal-00574931⟩

• Communication dans un congrès

Carbon nanotube programmable devices for adaptive architectures

G. Agnus, W. Zhao, Vincent Derycke, A. Filoramo, S. Lenfant, D. Vuillaume, C. Gamrat, J.P. Bourgoin

10th Trends in Nanotechnology International Conference, TNT2009, 2009, Barcelona, Spain. ⟨hal-00574937⟩

• Communication dans un congrès

Interface states characterization by an admittance spectroscopy technique in pentacene MIS capacitors

C. Petit, D. Zander, K. Lmimouni, M. Ternisien, S. Lenfant, D. Vuillaume

10th European Conference on Molecular Electronics, ECME 2009, 2009, Copenhagen, Denmark. ⟨hal-00574933⟩

• Communication dans un congrès

Monocouches organiques auto-assemblées pour les nanocomposants organiques

K. Lmimouni, D. Vuillaume, S. Lenfant, David Guérin, N. Clement, S. Pleutin

TELECOM'2009 & 6èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2009, Agadir, Maroc. ⟨hal-00574899⟩

• Communication dans un congrès

Effect of growth conditions and metal-organic precursor selection on InAs nanowire resistivity

C. Thelander, K.A. Dick, L.E. Froberg, M.T. Borgström, P. Caroff, L. Samuelson

Materials Research Society Fall Meeting, MRS Fall 2009, 2009, Boston, MA, United States. ⟨hal-00574855⟩

• Communication dans un congrès

Méthodes de détermination de l'indice effectif : application à un métamatériau uniaxial gaucher térahertz

Shengxiang Wang, Charles Croënne, Frédéric Garet, Karine Blary, Eric Lheurette, Jean-Louis Coutaz, Didier Lippens

Assemblée Générale du GDR Interférences d'Ondes, Nov 2009, Paris, France. pp.146-147. ⟨hal-00480352⟩

• Article dans une revue

A simple method for measuring Si-Fin sidewall roughness by AFM

X.H. Tang, V. Bayot, N. Reckinger, D. Flandre, J.P. Raskin, Emmanuel Dubois, B. Nysten

The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls is one of the most important structural parameters to be monitoredin order to optimize the fin patterning…

IEEE Transactions on Nanotechnology, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩. ⟨hal-00471972⟩

• Communication dans un congrès

Novel approach for planar Bragg grating characterization using prism coupling

J. Pello, T. Le, A. Lim, El Hadj Dogheche, M. Kaba, K. Pita, Didier Decoster, J.P. Huignard, S.C. Tjin, J. Chazelas

Asia Communications and Photonics Conference and Exhibition, ACP 2009, Optoelectronic Materials and Devices IV, 2009, China. pp.76310A-1-7, ⟨10.1117/12.852247⟩. ⟨hal-00579156⟩

• Article dans une revue

2x2 InP optical switching matrix based on carrier-induced effects for 1.55-µm applications

Malek Zegaoui, Nargess Choueib, Joseph Harari, Didier Decoster, V. Magnin, X. Wallart, Jean Chazelas

This letter demonstrates a 2 × 2 low optical crosstalk and low power consumption switching matrix device based on carrier-induced effects on an InP substrate. The matrix device comprises two digital optical switches (DOSs) with a wide multimode Y-junction associated with a sinusoidal passive…

IEEE Photonics Technology Letters, 2009, 21 (19), pp.1357-1359. ⟨10.1109/LPT.2009.2026484⟩. ⟨hal-00472780⟩

• Article dans une revue

Continuity and discontinuity. An epistemological inquiry based on the use of categories in history of science

Raffaele Pisano, Ilaria Gaudiello

Organon, 2009, 41 (1), pp.245-265. ⟨hal-04507967⟩