Publications

Affichage de 10191 à 10200 sur 16255


  • Communication dans un congrès

GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C

F Medjdoub, D. Marcon, J. Das, J. Derluyn, K. Cheng, S. Degroote, N. Vellas, Christophe Gaquière, Marie Germain, S. Decoutere

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.37-40. ⟨hal-00549996⟩

  • Article dans une revue

Circularly polarized millimeter-wave antenna using 0-level packaging

E. Herth, N. Rolland, T. Lasri

IEEE Antennas and Wireless Propagation Letters, 2010, 9, pp.934-937. ⟨10.1109/LAWP.2010.2080310⟩. ⟨hal-00549483⟩

  • Article dans une revue

Study of Ni2-Mn-Ga phase formation by magnetron sputtering film deposition at low temperature onto Si substrates and LaNiO3/Pb(Ti,Zr)O3 buffer

F. Figueiras, E. Rauwel, V.S. Amaral, N. Vyshatko, A.L. Kholkin, Caroline Soyer, Denis Remiens, V.V. Shvartsman, P. Borisov, W. Kleemann

Journal of Vacuum Science & Technology A, 2010, 28, pp.6-10. ⟨10.1116/1.3256200⟩. ⟨hal-00549531⟩

  • Communication dans un congrès

Control strategies and performance of a magnetically actuated tactile micro-actuator array

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

EuroHaptics International Conference on Generating and Perceiving Tangible Sensations, EuroHaptics 2010, 2010, France. pp.385-391, ⟨10.1007/978-3-642-14075-4_57⟩. ⟨hal-00549964⟩

  • Communication dans un congrès

A FIR baseband filter for high data rate 60-GHz wireless communications

J. Muller, A. Cathelin, A. Niknejad, A. Kaiser

IEEE International Symposium on Circuits and Systems, ISCAS 2010, 2010, France. pp.1771-1774, ⟨10.1109/ISCAS.2010.5537620⟩. ⟨hal-00549959⟩

  • Article dans une revue

Microwave performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb double heterojunction bipolar transistors

E. Mairiaux, L. Desplanque, X. Wallart, M. Zaknoune

IEEE Electron Device Letters, 2010, 31, pp.299-301. ⟨10.1109/LED.2010.2040241⟩. ⟨hal-00548566⟩

  • Article dans une revue

Development and characterization of a diamond-based localized surface plasmon resonance interface

Sabine Szunerits, S. Ghodbane, J. Niedziolka-Jonsson, E. Galopin, F. Klauser, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Rabah Boukherroub, D. Steinmuller-Nethl

Journal of Physical Chemistry C, 2010, 114, pp.3346-3353. ⟨10.1021/jp908916y⟩. ⟨hal-00549055⟩

  • Article dans une revue

DC electrical performances improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

Y. Guhel, B. Boudart, Christophe Gaquière, N. Vellas, J.L. Trolet, M. Piccione

Electronics Letters, 2010, 46, pp.650-652. ⟨10.1049/el.2010.0070⟩. ⟨hal-00549454⟩

  • Communication dans un congrès

High frequency performance of tellurium δ-doped AlSb/InAs HEMTs at low power supply

A. Olivier, A. Noudeviwa, Nicolas Wichmann, Yannick Roelens, L. Desplanque, Francois Danneville, Gilles Dambrine, X. Wallart, S. Bollaert

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.162-165. ⟨hal-00549918⟩