Publications

Affichage de 11 à 20 sur 16075


  • Article dans une revue

Stress and doping analysis of low n-doped GaN layers on various substrates by micro-Raman mapping

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Thomas Kaltsounis, Vishwajeet Maurya, Hala El Rammouz, Mohammed El Amrani, Maroun Dagher, Florian Bartoli, Thibaud Guillemin, Adrien Bidaud, Eric Frayssinet, Farid Medjdoub, Hassan Maher, Jean Marie Bluet, Dominique Planson, Julien Buckley, Yvon Cordier, Matthew Charles, Cyril Buttay

In this work, using micro-Raman spectroscopy mapping, we propose a methodology to separate the stress effect from the n-doping effect on A1LO and E2H GaN phonon modes frequency for low n-doped (<1017 cm−3) GaN layers grown on various substrates (GaN, sapphire, and silicon). This methodology…

Applied Physics Letters, 2026, 128 (12), ⟨10.1063/5.0325369⟩. ⟨hal-05577908⟩

  • Article dans une revue

Exploiting the insulator–metal transition of VO2 in photocatalytic methane conversion

My Nghe Tran, Duc Manh Nguyen, Matthieu Kpessu Ahounou, Ernesto de la Torre Miranda, Melissa Alzate Banguero, David Troadec, Christophe Coinon, Ahmed Addad, Karima Ben Tayeb, Alexandre Boulle, Pascale Diener, David Mele, Louis Thomas, Xavier Wallart, Lionel Aigouy, Alexandre Zimmers, Aurelian Crunteanu, Vitaly Ordomsky, Bruno Grandidier

Upon illumination, photocatalysts generate charge carriers for redox reactions, but their efficiency is often limited by carrier recombination and poor minority-carrier diffusion, despite many existing junction engineering strategies. Here we exploit the insulator–metal transition in VO2 to produce…

Nature Energy, 2026, ⟨10.1038/s41560-026-02013-w⟩. ⟨hal-05559160⟩

  • Pré-publication, Document de travail

Bottom gated in-plane InSb nanostructures on GaAs(111)B grown by selective area epitaxy

Clément Barbot, Christophe Coinon, Maxime Berthe, Yves Deblock, Qianqian Lan, Etienne Okada, L. Thomas, Pierre Capiod, Coline Demoncheaux, Rafal E Dunin-Borkowski, Philipp Ebert, Bruno Grandidier, Ludovic Desplanque

This work presents a method of achieving high-quality in-plane InSb nanowires on a highly mismatched GaAs (111)B substrate through the combination of atomic hydrogen-assisted selective area molecular beam epitaxy and extreme Sb-rich conditions. By inserting an InGaP barrier layer on top of the…

2026. ⟨hal-05547559⟩

  • Article dans une revue

Enhanced Thermoelectric Performance in Li-Intercalated PdPS

Weng Hou Yip, Chan How Oh, See Wee Koh, Qundong Fu, Xingli Wang, Ruihuan Duan, Philippe Coquet, Jing Wu, Mohamed Boutchich, Beng Kang Tay

ACS Applied Materials & Interfaces, 2026, 18 (11), pp.16316-16323. ⟨10.1021/acsami.5c21695⟩. ⟨hal-05575428⟩

  • Article dans une revue

Controllable Reconfiguration of DNA Nanostar Hydrogel Networks via Sticky-End Ligation

Audrey Cochard, Lucas Pinède, Yannick Tauran, Arnaud Brioude, Beomjoon Kim, Alexandre Baccouche, Vincent Salles, Anthony Genot, Soo Hyeon Kim

DNA nanostar hydrogels hold great promise as biomaterials, but their mechanical properties and nuclease susceptibility limit their use. Here, we propose ligation of nanostar sticky ends as a strategy to fundamentally transform the mechanical and dynamic properties of DNA nanostar hydrogels and…

Applied Materials Today, 2026, 49, pp.103169. ⟨10.1016/j.apmt.2026.103169⟩. ⟨hal-05552199⟩