Publicaciones

• Communication dans un congrès

Band gaps in phoXonic silicon crystal slab

Yan Pennec, El Houssaine El Boudouti, Bahram Djafari-Rouhani, Jerome O. Vasseur, Driss Bria, Youssef El Hassouani, C. Li, Sarah Benchabane, Vincent Laude, N. Papanikolaou

13th International Conference on Phonon Scattering in Condensed Matter, PHONONS 2010, Apr 2010, Taipei, Taiwan. pp.ThP24. ⟨hal-00541781⟩

• Article dans une revue

Dual phononic and photonic band gaps in a periodic array of pillars deposited on a thin plate

Y. El Hassouani, C. Li, Yan Pennec, E.H. El Boudouti, Hocine Larabi, Abdellatif Akjouj, Olivier Bou Matar, Vincent Laude, N. Papanikolaou, Alejandro Martinez, Bahram Djafari-Rouhani

We discuss the simultaneous existence of phononic and photonic band gaps in a periodic array of holes drilled in a Si membrane. We investigate in detail both the centered square lattice and the boron nitride (BN) lattice with two atoms per unit cell which include the simple square, triangular and...

Optics Express, 2010, 18 (13), pp.14301-14310. ⟨hal-00541550⟩

• Communication dans un congrès

Design and fabrication of a 45GHz MMIC oscillator based on InP/GaAsSb/InP DHBT process

Sylvain Laurent, Antonio Augusto Lisboa de Souza, Jean-Christophe Nallatamby, Michel Prigent, Virginie Nodjiadjim, Muriel Riet

This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was fabricated by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-μm-long two-finger emitter. The complete nonlinear modeling of...

Workshop on (INMMIC) 2010, Apr 2010, Göteborg, Sweden. pp.54-57, ⟨10.1109/INMMIC.2010.5480139⟩. ⟨hal-00606461⟩

• Communication dans un congrès

General solutions to the contact problem of two spheres with friction

Vladislav Aleshin, Koen van den Abeele

15th International Conference on Nonlinear Elasticity in Materials, ICNEM 2010, 2010, Otranto, Italy. ⟨hal-00819459⟩

• Communication dans un congrès

Laboratoire européen en magnéto-acoustique non-linéaire de la matière condensée

Philippe Pernod, Vladimir Preobrazhensky, F. Bunkin, A. Sigov

Année France-Russie 2010, Colloque CNRS " Coopération Scientifique avec la Russie - Bilan et Perspectives ", 2010, Paris, France. ⟨hal-00808186⟩

• Communication dans un congrès

Hexagonal boron nitride nanowalls synthesized by unbalanced RF magnetron sputtering

B. Ben Moussa, J. d'Haen, C. Borschel, M. Saitner, A. Soltani, V. Mortet, C. Ronning, M. d'Olieslaeger, H.G. Boyen, K. Haenen

Materials Research Society Fall Meeting, MRS Fall 2010, Symposium CC : Boron and boron compounds - From fundamentals to applications, 2010, Boston, MA, United States. pp.mrsf10-1307-cc06-09, 1-6, ⟨10.1557/opl.2011.505⟩. ⟨hal-00800885⟩

• Communication dans un congrès

A novel wafer level bonding/debonding technique using an anti-adhesion layer for polymer-based zero-level packaging of RF device

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

60th Electronic Components and Technology Conference, ECTC 2010, 2010, Las Vegas, NV, United States. pp.323-328, ⟨10.1109/ECTC.2010.5490954⟩. ⟨hal-00800848⟩

• Communication dans un congrès

Nonequilibrium fluctuation relations in a quantum coherent conductor

S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, K. Saito, Y. Utsumi, A.C. Gossard

30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. pp.329-330, ⟨10.1063/1.3666387⟩. ⟨hal-00800869⟩

• Communication dans un congrès

Cascaded acousto-optical deflectors for optical trapping

Jean-Claude Kastelik, Samuel Dupont, Michel Pommeray, Joseph Gazalet

European Optical Society Annual Meeting, EOSAM 2010, 2010, Paris, France. pp.TOM1_3455_07, 101-102. ⟨hal-00800864⟩

• Article dans une revue

Characterization of ytterbium silicide formed in ultra high vacuum

Adam Laszcz, Jacek Ratajczak, Andrzej Czerwinski, Jerzy Katcki, Vesna Srot, Fritz Phillipp, Peter A. van Aken, Dmitri Yarekha, Nicolas Reckinger, Guilhem Larrieu, Emmanuel Dubois

The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions...

Journal of Physics: Conference Series, 2010, 209 : 16th International Conference on Microscopy of Semiconducting Materials, pp.012056 (1--4). ⟨10.1088/1742-6596/209/1/012056⟩. ⟨hal-00549559⟩