Publicaciones

Affichage de 9731 à 9740 sur 16474


  • Communication dans un congrès

Interference modeling and relay selection issue for amplify-and-forward IR-UWB sensor networks

Jie Chen, Laurent Clavier, X. Yong, A. Burr, N. Rolland, P.A. Rolland

4th IFIP International Conference on New Technologies, Mobility and Security, NTMS 2011, 2011, France. pp.1-5, ⟨10.1109/NTMS.2011.5721051⟩. ⟨hal-00579047⟩

  • Communication dans un congrès

Atomic analyzis and photocurrent studies of isolated sub-100 nm diameter silicon nanowires

D. Stievenard, T. Xu, B. Grandidier, Yannick Lambert, C. Kreminsky, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, W. M. Chen, R. Larde, E. Cadel, P. Pareige

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579044⟩

  • Article dans une revue

Application of the finite differences method (FDTD) for the modeling of SAR in biological tissues

S. Kassimi, S. Bri, M. Habibi, A. Mamouni

Physical and Chemical News, 2011, 60, pp.31-40. ⟨hal-00783438⟩

  • Article dans une revue

Improved micromachining of all SU-8 3D structures for a biologically-inspired flying robot

X.Q. Bao, Thomas Dargent, Sébastien Grondel, J.B. Paquet, Eric Cattan

Microelectronic Engineering, 2011, 88, pp.2218-2224. ⟨10.1016/j.mee.2011.01.065⟩. ⟨hal-00795914⟩

  • Article dans une revue

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

S.R. Plissard, G. Larrieu, X. Wallart, P. Caroff

Nanotechnology, 2011, 22, pp.275602-1-7. ⟨10.1088/0957-4484/22/27/275602⟩. ⟨hal-00597081⟩

  • Article dans une revue

Epitaxial GaAs for X-ray imaging

G. C. Sun, R. Rao, S. Makham, J. C. Bourgoin, X. Y. Zhang, R. Gohier, F. Masiello, J. Haertwig, J. Baruchel, C. Ponchut, Andrea Balocchi, Xavier Marie, O. Gilard, Isabelle Roch-Jeune, J. C. Pesant

To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 633 (1), pp.S65-S68. ⟨10.1016/j.nima.2010.06.123⟩. ⟨hal-01233828⟩

  • Article dans une revue

CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI

G. Larrieu, Emmanuel Dubois, D. Ducatteau

ECS Transactions, 2011, 41, pp.275-282. ⟨10.1149/1.3633307⟩. ⟨hal-00795902⟩