Publicaciones

• Communication dans un congrès

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩. ⟨hal-00799795⟩

• Communication dans un congrès

Recent developments in amorphous sputterred ITO thin films acting as transparent front contact layer of CIGS solar cells for energy autonomous wireless microsystems

Thomas Aviles, C. Lethien, Malek Zegaoui, Jean-Pierre Vilcot, Floriane Leroy, Pascal Roussel, Nathalie Rolland, Paul-Alain Rolland

In this paper, we report on the study of electrical, optical and structural properties of RF sputtered Indium Tin Oxide (ITO) thin films at room temperature. These films are dedicated to act as front electrode of CIGS solar microcells and shall so compel with the electrical and optical criteria...

37th IEEE Photovoltaic Specialist Conference, PVSC 2011, Jun 2011, Seattle, WA, United States. pp.1235-1237, ⟨10.1109/PVSC.2011.6186180⟩. ⟨hal-00800073⟩

• Communication dans un congrès

Spectral regrowth analysis in wideband polar architectures applied to software defined radio

A. Werquin, A. Frappe, J. Muller, A. Kaiser

9th IEEE International New Circuits and Systems Conference, NEWCAS 2011, 2011, Bordeaux, France. pp.305-308, ⟨10.1109/NEWCAS.2011.5981316⟩. ⟨hal-00800023⟩

• Chapitre d'ouvrage

Low frequency acoustic devices for viscoelastic complex media characterization

Georges Nassar

Beghi M.G. Acoustic waves - From microdevices to helioseismology, InTech, Chapter 10, 213-238, 2011, ISBN 978-953-307-572-3. ⟨hal-00799656⟩

• Article dans une revue

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland

A report is presented on high-speed 100nm AlN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistive silicon substrate. The device delivers an extrinsic peak transconductance gm=530mS/mm, a maximum current of 1.74A/mm, and current gain and maximum oscillation cutoff...

Electronics Letters, 2011, 47 (24), pp.1345-1346. ⟨10.1049/el.2011.3166⟩. ⟨hal-00783379⟩

• Autre publication scientifique

Développements de capacités variables en technologie silicium pour les applications RF et mmW

Romain Debroucke

2011. ⟨hal-00799451⟩

• Communication dans un congrès

Anisotropic transport of InAs/AlSb heterostructures grown on InP substrates

G. Moschetti, H. Zhao, P.A. Nilsson, S. Wang, A. Kalabukhov, Gilles Dambrine, S. Bollaert, L. Desplanque, X. Wallart, J. Grahn

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Catania, Italy. pp.17-18. ⟨hal-00799700⟩

• Article dans une revue

Design and fabrication of insect-inspired composite wings for MAV application using MEMS technology

X.Q. Bao, A. Bontemps, Sébastien Grondel, Eric Cattan

Journal of Micromechanics and Microengineering, 2011, 21, pp.125020-1-16. ⟨10.1088/0960-1317/21/12/125020⟩. ⟨hal-00783487⟩

• Autre publication scientifique

Tunneling spectroscopy of hetero-nanocrystals

Thanh Hai Nguyen

2011. ⟨hal-00799435⟩

• Communication dans un congrès

Détermination de l'épaisseur d'une couche par ultrasons-laser

Sabrina Fourez, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

XIIèmes Journées d'Acoustique Physique Sous-Marine et Ultrasonore, JAPSUS 2011, 2011, Lille, France. ⟨hal-00807689⟩