Publicaciones

• Article dans une revue

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this paper, we report static electric drain-source current-voltage measurements for different gate voltages and at different temperatures, performed on Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors (HEMT). The results show the presence of kink and collapse effects. We have...

Journal of Applied Physics, 2012, 111 (7), pp.073713. ⟨10.1063/1.3702458⟩. ⟨hal-00787870⟩

• Article dans une revue

Comparative optical studies of InGaAs/GaAs quantum wells grown by MBE on (100) and (311)A GaAs planes

A. Khatab, M. Shafi, R.H. Mari, M. Aziz, M. Henini, G. Patriarche, David Troadec, M. Sadeghi, S. Wang

Physica Status Solidi C: Current Topics in Solid State Physics, 2012, 9, pp.1621-1623. ⟨10.1002/pssc.201100581⟩. ⟨hal-00790437⟩

• Communication dans un congrès

[Invited] The electro-magneto-elastic Eshelby tensor : applications to homogenization methods and nano-structures

S. Giordano, Yannick Dusch, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensky

Colloque National MECAMAT, 2012, Aussois, France. pp.1-13. ⟨hal-00806603⟩

• Communication dans un congrès

Narrow linewidth tunable THz signal generation using a unitravelling carrier photodiode and a dual-mode laser

Guillaume Ducournau, Alain Rolland, Goulc'Hen Loas, Alexandre Beck, Fabio Pavanello, Emilien Peytavit, Tahsin Akalin, Mohammed Zaknoune, Jean-Francois Lampin, Marc Brunel, François Bondu, Marc Vallet, Mehdi Alouini

A dual-frequency laser coupled to a unitravelling carrier photodiode is used to produce a highly coherent THz wave. THz signal is detected by a subharmonic mixer coupled to an electrical spectrum analyzer. All components involved in this experiment operate at room temperature and no active...

37th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2012, Sep 2012, Wollongong, Australia. pp.1-2, ⟨10.1109/IRMMW-THz.2012.6380162⟩. ⟨hal-00803095⟩

• Communication dans un congrès

Surface engineering by plasma : spectroscopic characterization of an N2-Ar discharge

A. Annusova, J. Kristof, C. Foissac, P. Supiot, P. Veis

14th Conference of Doctoral Students, ELITECH'12, 2012, Bratislava, Slovakia. ⟨hal-00798839⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of N2-Ar mixture discharge created by a RF helical coupling device - II. Vibrational distribution of N2(C3Πu, v') state

A. Annusova, C. Foissac, J. Kristof, P. Veis, P. Supiot

Plasma Sources Science and Technology, 2012, 21, pp.055022-1-11. ⟨hal-00790407⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of N2-Ar mixture discharge created by a RF helical coupling device - I. Kinetics of N2(B3Πg) and N2(C3Πu) states

C. Foissac, J. Kristof, A. Annusova, P. Veis, P. Supiot

Plasma Sources Science and Technology, 2012, 21, pp.055021-1-11. ⟨hal-00790405⟩

• Communication dans un congrès

Vibrational distribution function of N2(C3Πu, v') state in N2-Ar discharge created by a RF helical coupling device

A. Annusova, C. Foissac, J. Kristof, P. Veis, P. Supiot

XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG 2012, 2012, Viana do Castelo, Portugal. paper P1.1.10, 1-2. ⟨hal-00802624⟩

• Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we...

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

• Communication dans un congrès

Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure

L. Semra, A. Telia, M. Kaddeche, A. Soltani

1st International Conference on Engineering and Technology, ICET 2012, 2012, Cairo, Egypt. pp.1-4, ⟨10.1109/ICEngTechnol.2012.6396158⟩. ⟨hal-00801159⟩