Publicaciones

Affichage de 8461 à 8470 sur 16174


  • Article dans une revue

Band gap tunability of magneto-elastic phononic crystal

Olivier Bou Matar, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, P.A. Deymier, Philippe Pernod, Vladimir Preobrazhensky

The possibility of control and tuning of the band structures of phononic crystals offered by the introduction of an active magnetoelastic material and the application of an external magnetic field is studied. Two means to obtain large elastic properties variations in magnetoelastic material are...

Journal of Applied Physics, 2012, 111 (5), pp.054901. ⟨10.1063/1.3687928⟩. ⟨hal-00787018⟩

  • Communication dans un congrès

Effect of phonon confinement on the dispersion relation and heat capacity in nanoscale Si membranes

J. Cuffe, E. Chávez, A. Shchepetov, P.O. Chapuis, E.H. El Boudouti, F. Alzina, Yan Pennec, Bahram Djafari-Rouhani, M. Prunnila, J. Ahopelto, C.M. Sotomayor Torres

The effect of confinement on the acoustic phonon dispersion relation and heat capacity in free-standing silicon membranes is investigated, with thickness values down ∼ 8 nm. The discrete phonon branches are observed by angle-resolved inelastic light scattering spectroscopy. The fundamental flexural...

ASME 2012 International Mechanical Engineering Congress and Exposition, Symposium on Phononic Crystals and Acoustic Metamaterials, Nov 2012, Houston, United States. pp.1081-1088, ⟨10.1115/IMECE2012-87635⟩. ⟨hal-00911369⟩

  • Communication dans un congrès

Dielectric Parameters Study of insulation Wire Free of Volatile Organic Compound

S. Ait Amar, D. Roger, G. Velu, M. Ben Fatallah, A. Habas, J.-P. Habas, P. Notingher, P. Frezel

IEEE Annual Conf. on El. Insulation and Diel. Phenomena CEIDP, 2012, Montréal, Canada. ⟨hal-01882817⟩

  • Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to...

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

  • Article dans une revue

Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films

J. Ge, G. Pan, Denis Remiens, Y. Chen, F. Cao, X.L. Dong, G.S. Wang

Applied Physics Letters, 2012, 101, pp.112905-1-3. ⟨10.1063/1.4752726⟩. ⟨hal-00788341⟩

  • Article dans une revue

Influence of a superficial field of residual stress on the propagation of surface waves - Applied to the estimation of the depth of the superficial stressed zone

Marc Duquennoy, Mohammadi Ouaftouh, J. Deboucq, Jean-Etienne Lefebvre, Frédéric Jenot, Mohamed Ourak

Applied Physics Letters, 2012, 101, pp.234104-1-3. ⟨10.1063/1.4768434⟩. ⟨hal-00790364⟩