Publicaciones

• Communication dans un congrès

Development and simulation of a structure based on CuIn1-xGaxSe2 semiconductors alloys for a new generation of photovoltaic cells

Abdelkader Aissat, M. Fathi, Jean-Pierre Vilcot

The aim of our study is the development and simulation of thin films structure based on CuIn1-xGaxSe2 semiconductors alloys to improve the conversion efficiency of solar cells. We studied and simulated the variation effect of the Gallium concentration on some physical and electrical properties (...

International Conference on Clean Energy Solutions for Sustainable Environment, TerraGreen12, 2012, Beirut, Lebanon. pp.197-204, ⟨10.1016/j.egypro.2012.05.031⟩. ⟨hal-00801115⟩

• Article dans une revue

Tight-binding calculations of the optical properties of HgTe nanocrystals

Guy Allan, Christophe Delerue

We propose a tight-binding model of HgTe which gives an accurate band structure in a wide energy range compared to recent ab initio calculations. The inverted band structure near the Fermi level and its temperature dependence are also very well described. Using this parametrization, we study the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (16), pp.165437. ⟨10.1103/PhysRevB.86.165437⟩. ⟨hal-00787874⟩

• Article dans une revue

Generalized interface models for transport phenomena : unusual scale effects in composite nanomaterials

F. Pavanello, F. Manca, Pier Luca Palla, S. Giordano

The effective transport properties of heterogeneous nanoscale materials and structures are affected by several geometrical and physical factors. Among them, the presence of imperfect interfaces plays a central role being often at the origin of the scale effects. To describe real contacts between...

Journal of Applied Physics, 2012, 112 (8), pp.084306. ⟨10.1063/1.4759017⟩. ⟨hal-00787479⟩

• Article dans une revue

Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors

N. Clement, G. Larrieu, Emmanuel Dubois

Investigation of low-frequency noise in nanoscale Schottky-barrier (SB)-based field-effect transistors (SB-FETs) is of prime importance due to its large amplitude in emerging bottom-up devices. In addition, noise can give additional information on charge transport mechanisms. In this paper, we...

IEEE Transactions on Electron Devices, 2012, 59 (1), pp.180-187. ⟨10.1109/TED.2011.2169676⟩. ⟨hal-00787365⟩

• Article dans une revue

Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications

Etienne Herth, H Desré, Emmanuelle Algré, Christiane I. Legrand, Tuami Lasri

The aim of this work is to determine optimal deposition parameters of silicon nitride for optical applications. The authors present the investigation of hydrogenated amorphous silicon nitride SiNx:H deposited by the low temperature PECVD method in high frequency reactors. The study of hydrogen...

Microelectronics Reliability, 2012, 52 (1), pp.141-146. ⟨10.1016/j.microrel.2011.09.004⟩. ⟨hal-02300326⟩

• Article dans une revue

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

K. Pantzas, G. Patriarche, David Troadec, S. Gautier, T. Moudakir, S. Suresh, L. Largeau, O. Mauguin, P. L. Voss, A. Ougazzaden

Using elastic scattering theory we show that a small set of energy dispersive x-ray spectroscopy (EDX) measurements is sufficient to experimentally evaluate the scattering function of electrons in high-angle annular dark field scanning transmission microscopy (HAADF-STEM). We then demonstrate how...

Nanotechnology, 2012, 23, pp.455707-455716. ⟨10.1088/0957-4484/23/45/455707⟩. ⟨hal-00747027⟩

• Article dans une revue

Réalisation de transistors fibreux électroniques et de circuits électroniques textiles

X. Tao, V. Koncar, C. Dufour

L'Actualité Chimique, 2012, 360-361, pp.65-68. ⟨hal-00806590⟩

• Proceedings/Recueil des communications

Il Trattato di Fortificazione di Galileo Galilei (Galileio Galilei's Trattato di Fortificazione)

Raffaele Pisano, Danilo Capecchi

Proceedings of the 4th History of Engineering Conference, I, Cuzzolin, pp.77-90, 2012, 978-88-87479-48-5. ⟨hal-04514409⟩

• Communication dans un congrès

STM and STS characterization of PTCDI self assembly on Si(111) Ag surface

R. Stiufiuc, C. Iacovita, B. Grandidier, V. Chis, G. Stiufiuc

International Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France. ⟨hal-00798184⟩

• Article dans une revue

Structure and electrical properties in the K1/2Bi1/2TiO3-K1/2Bi1/2ZrO3 solid solution (KBT-KBZ)

M. Bengagi, François Morini, M. El Maaoui, Pascal Marchet

The present work is devoted to the study of the Zr 4þ /Ti 4 substitution in the K1/2Bi1/2Ti(1-x)ZrxO3 solid solution (x ¼ 0.0 to x ¼ 1.0), based upon the K1/2Bi1/2TiO3 (KBT) ferroelectric compound. The tetragonal distortion of KBT is suppressed by this substitution and leads to the cubic compound...

Physica Status Solidi A (applications and materials science), 2012, 209, pp.2063-2072. ⟨10.1002/pssa.201127327⟩. ⟨hal-00720501⟩