Publicaciones
Affichage de 8081 à 8090 sur 16086
Investigation of GaAs/GaAsxSb1-x nanowires by micro-Raman spectroscopy
L. Zweifel, P. Caroff, S. Conesa Boj, M. Heiss, A. Fontcubeta I Morral
31st International Conference on the Physics of Semiconductors, ICPS 2012, 2012, Zurich, Switzerland. ⟨hal-00797652⟩
The vibration dipole : a time reversed acoustics scheme for the experimental localisation of surface breaking cracks
B. van Damme, K. van den Abeele, Olivier Bou Matar
Applied Physics Letters, 2012, 100, pp.084103-1-3. ⟨10.1063/1.3690043⟩. ⟨hal-00787355⟩
Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer
L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart
Applied Physics Letters, 2012, 101, pp.142111-1-4. ⟨10.1063/1.4758292⟩. ⟨hal-00787025⟩
Impurity-limited mobility and variability in gate-all-around silicon nanowires
Y.M. Niquet, H. Mera, C. Delerue
Applied Physics Letters, 2012, 100, pp.153119-1-4. ⟨10.1063/1.4704174⟩. ⟨hal-00787840⟩
Technique multi-port pour la microscopie champ proche microonde
Kamel Haddadi, T. Lasri
2èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S8, papier ID18, 1-4. ⟨hal-00806622⟩
Transmission exaltée à travers une ouverture sous longueur d'onde. Application aux méta-matériaux ferroélectriques
Véronique Sadaune, L. Kang, D. Lippens
12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S4, papier ID7, 1-4. ⟨hal-00806594⟩
Extraction entre 40 MHz et 67 GHz de la permittivité complexe du KTa0.65Nb0.3503 déposé en couche mince
G. Houzet, T. Lacrevaz, C. Bermond, A. Le Febvrier, S. Deputier, Maryline Guilloux-Viry, K. Blary, B. Flechet
12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S1, papier ID52, 1-4. ⟨hal-00806607⟩
AlGaN/GaN based field effect transistors for terahertz detection and imaging
M. Sakowicz, M.B. Lifshits, O.A. Klimenko, D. Coquillat, N. Dyakonova, F. Teppe, Christophe Gaquière, M.A. Poisson, S. Delage, W. Knap
SPIE 2012 Photonics West, Gallium Nitride Materials and Devices VII, 2012, San Francisco, CA, United States. pp.82621V-1-5, ⟨10.1117/12.908236⟩. ⟨hal-00801202⟩
In0.53Ga0.47As MOSFET with gate-first and gate-last process
J.J. Mo, Nicolas Wichmann, S. Bollaert
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801048⟩
100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies
J.S. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert
24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.233-236, ⟨10.1109/ICIPRM.2012.6403366⟩. ⟨hal-00801043⟩