Publicaciones

• Article dans une revue

Vertical nanowire array-based field effect transistors for ultimate scaling

G. Larrieu, X.L. Han

Nanoscale, 2013, 5, pp.2437-2441. ⟨10.1039/C3NR33738C⟩. ⟨hal-00797210⟩

• Article dans une revue

Fabrication, characterization, and physical analysis of AlGaN/GaN HEMTs on flexible substrates

N. Defrance, F. Lecourt, Y. Douvry, Marie Lesecq, Virginie Hoel, A. Lecavelier Des Etangs-Levallois, Y. Cordier, A. Ebongue, Jean-Claude de Jaeger

IEEE Transactions on Electron Devices, 2013, 60, pp.1054-1059. ⟨10.1109/TED.2013.2238943⟩. ⟨hal-00797212⟩

• Communication dans un congrès

Pattern classification by memristive crossbar circuits with ex-situ and in-situ training

F. Alibart, E. Zamanidoost, D.B. Strukov

Materials Research Society Spring Meeting, MRS Spring 2013, Symposium DD : Emerging Materials and Devices for Future Nonvolatile Memories, 2013, San Francisco, CA, United States. ⟨hal-00811780⟩

• Chapitre d'ouvrage

Modeling and design of BAW resonators and filters for integration in a UMTS transmitter

Matthieu Chatras, Stéphane Bila, S. Giraud, L. Catherinot, J. Fan, Dominique Cros, M. Aubourg, A. Flament, A. Frappé, B. Stefanelli, A. Kaiser, A. Cathelin, J.B. David, A. Reinhardt, L. Leyssenne, E. Kerhervé

Marco G. Beghi. Modeling and measurement methods for acoustic waves and for acoustic microdevices, InTech, pp.323-354, 2013, 978-953-51-1189-4. ⟨10.5772/56026⟩. ⟨hal-00878455⟩

• Article dans une revue

Heterozygous and homozygous JAK2(V617F) states modeled by induced pluripotent stem cells from myeloproliferative neoplasm patients

Joseph Saliba, S. Hamidi, G. Lenglet, T. Langlois, J. Yin, X. Cabagnols, L. Secardin, C. Legrand, A. Galy, P. Opolon, B. Benyahia, E. Solary, O. A. Bernard, L. Chen, N. Debili, H. Raslova, F. Norol, W. Vainchenker, I. Plo, A. Di Stefano

JAK2(V617F) is the predominant mutation in myeloproliferative neoplasms (MPN). Modeling MPN in a human context might be helpful for the screening of molecules targeting JAK2 and its intracellular signaling. We describe here the derivation of induced pluripotent stem (iPS) cell lines from 2...

PLoS ONE, 2013, 8 (9), pp.e74257. ⟨10.1371/journal.pone.0074257⟩. ⟨hal-02881155⟩

• Communication dans un congrès

Barrières tunnel épitaxiées sur graphène

F. Godel, E. Pichonat, D. Vignaud, B. Doudin, J.F. Dayen, D. Halley

XVe Colloque Louis Néel, Couches Minces et Nanostructures Magnétiques, 2013, Tours, France. papier MMCS-13, 233-234. ⟨hal-00878371⟩

• Article dans une revue

Acoustic wave localization in one-dimensional Fibonacci phononic structures with mirror symmetry

Anne-Christine Hladky, Jerome O. Vasseur, S. Degraeve, C. Granger, M. de Billy

This paper reports on numerical and experimental results of acoustic transmission spectra of bead chains with symmetric and asymmetric Fibonacci-like structures. As a matter of comparison, perfect periodic acoustic waveguide structures are also examined. This study shows that Fibonacci structures...

Journal of Applied Physics, 2013, 113 (15), pp.154901. ⟨10.1063/1.4801890⟩. ⟨hal-00816416⟩

• Communication dans un congrès

Ajout d'un recuit dédié à la réduction de la résistance extrinsèque de base dans les TBH SiGe:C DPSA-SEG

Elodie Canderle

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957780⟩

• Communication dans un congrès

Caractérisation et modélisation en petit signal de transistor bipolaire à hétérojonction Si/SiGe:C jusqu'à 220 GHz

Marina Deng

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957773⟩

• Article dans une revue

Gate length variation effect on performance of gate-first self-aligned In0.53Ga0.47As MOSFET

Mohd F. Mohd Razip Wee, Arash Dehzangi, S. Bollaert, Nicolas Wichmann, Burhanuddin Y. Majlis

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter...

PLoS ONE, 2013, 8, e82731, 8 p. ⟨10.1371/journal.pone.0082731⟩. ⟨hal-00922403⟩