Publicaciones

Affichage de 7061 à 7070 sur 16086


  • Communication dans un congrès

CVD graphene growth on Ni films and transfer

Geetanjali Deokar, Jean-Louis Codron, Christophe Boyaval, Xavier Wallart, Dominique Vignaud

4th Graphene Conference, Graphene 2014, 2014, Toulouse, France. ⟨hal-01005676⟩

  • Communication dans un congrès

Combined photonic-plasmonic modes inside photonic crystal cavities

Abdelali Mrabti, Said El-Jallal, Gaëtan Lévêque, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani

joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. 2 p. ⟨hal-01015279⟩

  • Communication dans un congrès

Bulk and surface acoustic waves in solid-fluid Fibonacci layered materials

El Houssaine El Boudouti, Ilyasse Quotane, Bahram Djafari-Rouhani, Youssef El Hassouani, Victor Velasco

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. ⟨hal-01015265⟩

  • Communication dans un congrès

Evolution of Bragg and low frequency gaps in a phononic plate formed by pillars deposited on a drilled plate

Stéphanie Hemon, Yan Pennec, Abdellatif Akjouj, Rayisa Moiseyenko, Bahram Djafari-Rouhani, Bernard Bonello

joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. 2 p. ⟨hal-01015304⟩

  • Communication dans un congrès

Semiconductors with dimensionality between zero and two

Efterpi Kalesaki, Christophe Delerue, Cristiane Morais Smith, Wouter Beugeling, Guy Allan, Daniel Vanmaekelbergh

Workshop "Designing Dirac carriers in semiconductor honeycomb superlattices", 2014, Utrecht, Netherlands. ⟨hal-01015322⟩

  • Article dans une revue

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

J.F. Millithaler, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonz Alez, P. Sangaré, Guillaume Ducournau, Christophe Gaquière, J. Mateos

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode....

Applied Physics Letters, 2014, 104, 073509, 4 p. ⟨10.1063/1.4866166⟩. ⟨hal-00951554⟩

  • Article dans une revue

On the effect of δ-doping in self-switching diodes

Andreas Westlund, Ignacio Iñiguez-De-La-Torre, Per-Åke Nilsson, Tomas González, Javier Mateos, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, L. Desplanque, Xavier Wallart, Jan Grahn

Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design...

Applied Physics Letters, 2014, 105 (9), 093505, 5 p. ⟨10.1063/1.4894806⟩. ⟨hal-01061584⟩

  • Communication dans un congrès

Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes

H. Mosbahi, M. Charfeddine, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport properties. Moreover, III-V nitrides could be suitable for the emitters...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961393⟩