Publicaciones

• Article dans une revue

Enhancement of thermoelectric power factor in NaxCoO2/Au multilayers

Xiaohui Zhao, Haifeng Wang, Shufang Wang, El Hadj Dogheche, Jianglong Wang, Guangsheng Fu

NaxCoO2/Au thin film multilayers, with a thickness of the Au layer of 0.5–12 nm, have been fabricated on c-Al2O3 by post annealing of the CoO/Au thin film multilayers in Na vapor at high temperature in air. X-ray diffraction measurements revealed that the resulting NaxCoO2 layer was c-axis oriented...

RSC Advances, 2014, 4 (100), pp.57148-57152. ⟨10.1039/C4RA07319C⟩. ⟨hal-03560771⟩

• Communication dans un congrès

Conductance switching by light and electric field in new azobenzene derivatives-gold nano-particle self-assembled networks (NPSAN)

Yannick Viero, Stéphane Lenfant, David Guérin, Dominique Vuillaume, Dora Demeter, Philippe Blanchard, Jean Roncali

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055037⟩

• Article dans une revue

Bragg band gaps tunability in an homogeneous piezoelectric rod with periodic electrical boundary conditions

Sébastien Degraeve, Christian Granger, Bertrand Dubus, Jerome O. Vasseur, Mai Pham Thi, Anne-Christine Hladky

An homogeneous piezoelectric rod is shown to exhibit Bragg band gaps when an electrical boundary condition is applied periodically with the help of metallic electrodes. An analytical model is developed which formulation depends on the applied electric boundary condition and reveals that Bragg band...

Journal of Applied Physics, 2014, 115, 194508, 8 p. ⟨10.1063/1.4876757⟩. ⟨hal-00995265⟩

• Article dans une revue

From 'petal effect' to 'lotus effect' on the highly flexible Silastic S elastomer microstructured using a fluorine based reactive ion etching process

Christophe Frankiewicz, Farzam Zoueshtiagh, Abdelkrim Talbi, Jeremy Streque, Philippe Pernod, Alain Merlen

A fluorine-based reactive ion etching (RIE) process has been applied on a new family of silicone elastomers named 'Silastic S' for the first time. Excellent mechanical properties are the principal advantage of this elastomer. The main objective of this study was (i) to develop a new...

Journal of Micromechanics and Microengineering, 2014, 24 (11), ⟨10.1088/0960-1317/24/11/115008⟩. ⟨hal-03277849⟩

• Article dans une revue

[Review] Generation of transversal envelope soliton in polymeric and wooden rods

M. de Billy, Anne-Christine Hladky

This paper is concerned with the probing of the transversal envelope solitons propagation in circular waveguides when a set of requirements (non-linearity and dispersion) are fulfilled in the waveguide and balanced. The basic idea is to analyze the shape of an acoustic pulse after it has traveled...

Ultrasonics, 2014, 54, pp.1281-1288. ⟨10.1016/j.ultras.2014.01.016⟩. ⟨hal-00969120⟩

• Communication dans un congrès

Interfacial strength of InP/Si substructure

Éric Le Bourhis, Konstantinos Pantzas, Gilles Patriarche, Isabelle Sagnes, David Troadec, Anne Talneau

16th International Conference on Experimental Mechanics, ICEM16, 2014, Cambridge, United Kingdom. 2 p. ⟨hal-00992686⟩

• Communication dans un congrès

Nonlinear measurement of non periodic pulse train with mixer based NVNA dedicated to radar power amplifier

Vincent Bridier, Damien Ducatteau, Maxime Olivier, Hans-Joachim Simon, François Graux, Philippe Eudeline, Gilles Dambrine

A measurement of time domain waveforms using a commercial two ports mixer based NVNA to measure a non periodic repetitive radar pulse train as a periodic one was performed. Then for the first time a 20GHz six port mixer based NVNA able to measure three different frequencies at the same time is...

International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2014, 2014, Leuven, Belgium. 3 p., ⟨10.1109/INMMIC.2014.6815076⟩. ⟨hal-01005646⟩

• Article dans une revue

RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor

Francois Danneville, Laurent Poulain, Yoann Tagro, Sylvie Lepilliet, Benjamin Dormieu, Daniel Gloria, P. Scheer, Gilles Dambrine

In order to pursue Moore's law, material engineering has constituted a real focus during the last decade. In particular, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-k/MG) for CMOS was a key point to downscale the 'Equivalent Oxide Thickness'....

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2014, 27, pp.736-747. ⟨10.1002/jnm.1972⟩. ⟨hal-01058062⟩

• Communication dans un congrès

High polarization high breakdown voltage AlN/GaN-on-silicon transistors

Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub

We have developed a back-side process on AlN/GaN-on-Si DHFETs in order to drastically enhance their electrical performances. With a buffer thickness of 1.8 μm, the Si substrate has been locally etched up to the buffer layers between the drain and the gate. After local silicon removal, the three-...

38th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2014, 2014, Delphi, Greece. 2 p. ⟨hal-01006455⟩

• Communication dans un congrès

Acoustical twisting

Antoine Riaud, Michael Baudoin, Jean-Louis Thomas, Olivier Bou Matar

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. 2 p. ⟨hal-01015314⟩