Publicaciones

• Article dans une revue

RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor

Francois Danneville, Laurent Poulain, Yoann Tagro, Sylvie Lepilliet, Benjamin Dormieu, Daniel Gloria, P. Scheer, Gilles Dambrine

In order to pursue Moore's law, material engineering has constituted a real focus during the last decade. In particular, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-k/MG) for CMOS was a key point to downscale the 'Equivalent Oxide Thickness'....

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2014, 27, pp.736-747. ⟨10.1002/jnm.1972⟩. ⟨hal-01058062⟩

• Communication dans un congrès

High polarization high breakdown voltage AlN/GaN-on-silicon transistors

Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub

We have developed a back-side process on AlN/GaN-on-Si DHFETs in order to drastically enhance their electrical performances. With a buffer thickness of 1.8 μm, the Si substrate has been locally etched up to the buffer layers between the drain and the gate. After local silicon removal, the three-...

38th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2014, 2014, Delphi, Greece. 2 p. ⟨hal-01006455⟩

• Communication dans un congrès

Acoustical twisting

Antoine Riaud, Michael Baudoin, Jean-Louis Thomas, Olivier Bou Matar

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. 2 p. ⟨hal-01015314⟩

• Article dans une revue

Source localisation in a reverberant plate using average coda properties and early signal strength

Hossep Achdjian, Emmanuel Moulin, Farouk Benmeddour, Jamal Assaad, Lynda Chehami

A statistical reverberation model based on the average distribution of wave packets propagating in a finite plate is described and it is shown that by fitting experimental data to theoretical expressions, either structural or source-related features can be extracted with very few sensors. An...

Acta Acustica united with Acustica, 2014, 100, pp.834-841. ⟨10.3813/AAA.918763⟩. ⟨hal-01058146⟩

• Article dans une revue

[Invited Review] SU-8 as a material for lab-on-a-chip-based mass spectrometry

S. Arscott

This short review focuses on the application of SU-8 for the microchip-based approach to the miniaturization of mass spectrometry. Chip-based mass spectrometry will make the technology commonplace and bring benefits such as lower costs and autonomy. The chip-based miniaturization of mass...

Lab on a Chip, 2014, 14 (19), pp.3668-3689, selected as " hot article ". ⟨10.1039/C4LC00617H⟩. ⟨hal-01058486⟩

• Article dans une revue

Design of GaN based optical modulator with Mach-Zehnder interferometer structure

R.W. Purnamaningsih, N.R. Poespawati, Irma Saraswati, El Hadj Dogheche

In this work we have designed a Mach Zehnder interferometer (MZI) for electro optic modulator at telecommunication wavelength using GaN on Sapphire. The knowledge of GaN sample optical properties were also investigated, resulting refractive index for the GaN layers were found to be nTE=2.279±0.001...

WSEAS Transactions on Communications, 2014, 13, pp.229-233. ⟨hal-01044743⟩

• Communication dans un congrès

The resonance/thickness prediction of an ultra-thin layer by the low-frequency ultrasound

Gui-Jin Yao, Wei-Jiang Xu, Ke-Xie Wang

A prediction method of the thickness, resonant space and frequency for the two cases of an ultra-thin layer and the narrow-band frequency spectra has been developed without the appearance of the resonance/anti-resonance. Using the characteristic of straight line and the period of π of the layer...

21st International Congress on Sound and Vibration, ICSV 21, 2014, Beijing, France. paper 320, 7 p. ⟨hal-01055051⟩

• Communication dans un congrès

Redox-coated nanoelectrode array : when molecular electronics meets electrochemistry

Jorge Trasobares, R. Sivakumarasamy, C. Whal, Francois Vaurette, T. Martin, Jean-Philippe Nys, Dominique Vuillaume, Didier Theron, Nicolas Clément

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055038⟩

• Communication dans un congrès

Optical properties of nanoporous gallium nitride for photonic applications

Bandar Alshehri

The aim of this research is to characterize the optical properties of a gallium nitride thin film grown on sapphire by MOCVD. Nanoporous of gallium nitride are formed by electrochemical etching. Refractive index, thickness and birefringence are extracted from the nanoporous thin film. Prism...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020289⟩

• Communication dans un congrès

Impact du recuit d'activation sur la passivation par Al2O3 du silicium type p Cz

Matthieu Pawlik, Jean-Pierre Vilcot, Mathieu Halbwax, M. Gauthier, N. Le Quang

L'Al2O3 déposé par ALD est un diélectrique bien connu pour la passivation de surface du silicium type-p. Cependant, une étape de recuit post-dépôt est nécessaire pour activer la passivation. Grâce à des mesures de densités de charges effectives, de défauts d'interface, temps de vie de...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020286⟩