Publicaciones

Affichage de 6141 à 6150 sur 16174


  • Communication dans un congrès

An indoor localization technique based on ultra-wideband AoD/AoA/ToA estimation

Brecht Hanssens, David Plets, Emmeric Tanghe, Claude Oestges, Davy Gaillot, M. Lienard, Luc Martens, Wout Joseph

Jjoint 2016 IEEE International Symposium on Antennas and Propagation and URSI/USNC National Radio Science Meeting, AP-S/USNC-URSI 2016, Jun 2016, Fajardo, PR, United States. pp.1445-1446, ⟨10.1109/APS.2016.7696429⟩. ⟨hal-03346251⟩

  • Article dans une revue

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors

Nicolas Herbecq, Isabelle Roch-Jeune, Astrid Linge, Malek Zegaoui, Pierre-Olivier Jeannin, Nicolas Clément, Jean-Paul Rouger, F Medjdoub

Physica Status Solidi A (applications and materials science), 2016, 213 (4), pp.873--877. ⟨10.1002/pssa.201532572⟩. ⟨hal-02277752⟩

  • Communication dans un congrès

Coherent & tunable THz source

R. Paquet, S. Blin, M. Myara, L. Le Gratiet, M. Sellahi, B. Chomet, P. Latzel, Guillaume Ducournau, Jean-Francois Lampin, G. Beaudoin, I. Sagnes, A. Garnache

Meeting GDR NanoTeramir, 2016, Paris, France. ⟨hal-01919731⟩

  • Article dans une revue

AlN/IDT/AlN/Sapphire SAW Heterostructure for High-Temperature Applications

Ouarda Legrani, Thierry Aubert, Omar Elmazria, Ausrine Bartasyte, Pascal Nicolay, Abdelkrim Talbi, Pascal Boulet, Jaafar Ghanbaja, Denis Mangin

Recent studies have evidenced that Pt/AlN/Sapphire SAW devices are promising for high-temperature high-frequency applications. However, they cannot be used above 700°C in air atmosphere as the Pt interdigital transducers (IDTs) agglomerate and the AlN layer oxidizes in such conditions. In this...

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2016, 63 (6), pp.898 - 906. ⟨10.1109/TUFFC.2016.2547188⟩. ⟨hal-01525494⟩