Publicaciones

• Communication dans un congrès

Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding

Emmanuel Dubois, Justine Philippe, Matthieu Berthomé, J.F. Robillard, Christophe Gaquière, Francois Danneville, Daniel Gloria, Christine Raynaud

Based on a simple process referred to as ultimate thinning-and-transfer-bonding (UTTB), this paper shows that the high-frequency performance of advanced CMOS technologies can be combined with mechanical flexibility and transparency. The invariance upon thinning, transfer and flexure of both DC and...

6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. ⟨10.1109/ESTC.2016.7764513⟩. ⟨hal-03272693⟩

• Article dans une revue

Broadband dielectric characterization of aqueous saline solutions by an interferometer-based microwave microscope

S. Gu, Tianjun Lin, T. Lasri

The complex dielectric permittivity of aqueous saline solutions has been determined in the frequency range [2-18 GHz] with a home-made near-field microwave microscope. The instrument is built on a vector network analyzer, a matching network, and an evanescent microwave probe. The interferometer-...

Applied Physics Letters, 2016, 108 (24), pp.242903. ⟨10.1063/1.4953629⟩. ⟨hal-03538486⟩

• Article dans une revue

Inverse saffman-taylor experiments with particles lead to capillarity driven fingering instabilities

Ilyesse Bihi, Michael Baudoin, Jason E. Butler, Christine Faille, Farzam Zoueshtiagh

Using air to displace a viscous fluid contained in a Hele-Shaw cell can create a fingering pattern at the interface between the fluids if the capillary number exceeds a critical value. This Saffman-Taylor instability is revisited for the inverse case of a viscous fluid displacing air when partially...

Physical Review Letters, 2016, 117 (3), ⟨10.1103/PhysRevLett.117.034501⟩. ⟨hal-02636447⟩

• Article dans une revue

METASTABILITY OF FINITE STATE MARKOV CHAINS: A RECURSIVE PROCEDURE TO IDENTIFY SLOW VARIABLES FOR MODEL REDUCTION

Claudio Landim, T. Xu

Consider a sequence (η N (t) : t ≥ 0) of continuous-time, irreducible Markov chains evolving on a fixed finite set E. Denote by R N (η, ξ) the jump rates of the Markov chain η N t , and assume that for any pair of bonds (η, ξ),

ALEA : Latin American Journal of Probability and Mathematical Statistics, 2016. ⟨hal-01728594⟩

• Article dans une revue

DS-UWB and TH-UWB Energy Consumption Comparison

Adil Elabboubi, Fouzia Elbahhar, Marc Heddebaut, Yassin El Hillali

The energy consumption of the wireless communication systems is starting to be unaffordable. One way to improve the power consumption is the optimization of the communication techniques used by the communication networks and devices. In order to develop an energy efficient UWB multi-user...

Journal of Telecommunications and Information Technology, 2016, 2016 (1), pp.101-109. ⟨hal-01469836v2⟩

• Article dans une revue

Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons

Jing Li, Yann-Michel Niquet, Christophe Delerue

We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the...

Physical Review Letters, 2016, 116 (23), pp.236602. ⟨10.1103/PhysRevLett.116.236602⟩. ⟨cea-01849844⟩

• Article dans une revue

AlN/IDT/AlN/Sapphire SAW Heterostructure for High-Temperature Applications

Ouarda Legrani, Thierry Aubert, Omar Elmazria, Ausrine Bartasyte, Pascal Nicolay, Abdelkrim Talbi, Pascal Boulet, Jaafar Ghanbaja, Denis Mangin

Recent studies have evidenced that Pt/AlN/Sapphire SAW devices are promising for high-temperature high-frequency applications. However, they cannot be used above 700°C in air atmosphere as the Pt interdigital transducers (IDTs) agglomerate and the AlN layer oxidizes in such conditions. In this...

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2016, 63 (6), pp.898 - 906. ⟨10.1109/TUFFC.2016.2547188⟩. ⟨hal-01525494⟩

• Article dans une revue

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, J.C. Dejaeger, Nathalie Malbert

Microelectronics Reliability, 2016. ⟨hal-01718762⟩

• Communication dans un congrès

Toward Energy Profiling of Connected Embedded Systems

Nadir Cherifi, Gilles Grimaud, Alexandre Boé, Thomas Vantroys

A huge number of connected objects are expected to be deployed over the coming years in various areas of everyday life. Many of these objects are energy-constrained and depend on a battery. Thus, energy is a critical resource that limits a large scale deployment, and greatly complicates the...

NTMS 2016 - 8th IFIP International Conference on New Technologies, Mobility and Security , Nov 2016, Larnaca, Cyprus. pp.1 - 4, ⟨10.1109/NTMS.2016.7792483⟩. ⟨hal-01599164⟩

• Article dans une revue

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors

Nicolas Herbecq, Isabelle Roch-Jeune, Astrid Linge, Malek Zegaoui, Pierre-Olivier Jeannin, Nicolas Clément, Jean-Paul Rouger, F Medjdoub

Physica Status Solidi A (applications and materials science), 2016, 213 (4), pp.873--877. ⟨10.1002/pssa.201532572⟩. ⟨hal-02277752⟩