Publicaciones

Affichage de 5551 à 5560 sur 16077


  • Communication dans un congrès

A G band +2 dBm balanced frequency doubler in 55 nm SiGe BiCMOS

Walid Aouimeur, José Moron Guerra, Ayssar Serhan, Sylvie Lepilliet, Thomas Quémerais, Daniel Gloria, Estelle Lauga-Larroze, Jean-Daniel Arnould, Christophe Gaquière

In this paper, a new balanced frequency doubler based on a Marchand Balun with Coupled Slow-wave Coplanar Wave (CS-CPW) lines in G band is presented and analyzed. The experimental results of the frequency doubler exhibit at 174 GHz a peak output power of +2 dBm associate with a linear conversion...

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan 2017, Phoenix, AZ, United States. pp.60-63, ⟨10.1109/SIRF.2017.7874371⟩. ⟨hal-02012682⟩

  • Communication dans un congrès

A D-band tuner for in-situ noise and power characterization in BiCMOS 55 nm

Simon Bouvot, Alice Bossuet, Thomas Quémerais, Guillaume Ducournau, Francois Danneville, Estelle Lauga-Larroze, Daniel Gloria, Jean-Michel Fournier, Christophe Gaquière

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan 2017, Phoenix, United States. pp.103-106. ⟨hal-02012861⟩

  • Ouvrages

Functionalized Nanomaterials for the Management of Microbial Infection: A Strategy to Address Microbial Drug Resistance

Rabah Boukherroub, Sabine Szunerits, Djamel Drider

2017, 032341625X. ⟨hal-04549110⟩

  • Article dans une revue

Nonlinear secondary noise sources for passive defect detection using ultrasound sensors

Lynda Chehami, Emmanuel Moulin, Julien de Rosny, Claire Prada, Eric Chatelet, Giovanna Lacerra, Konstantinos Gryllias, Francesco Massi

This paper introduces the concept of secondary noise sources for passive defect detection and localization in structures. The proposed solution allows for the exploitation of the principle of Green's function reconstruction from noise correlation, even in the absence of an adequate ambient...

Journal of Sound and Vibration, 2017, 386, pp.283 - 294. ⟨10.1016/j.jsv.2016.10.006⟩. ⟨hal-01835485⟩

  • Article dans une revue

Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique

F. Berthet, S. Petitdidier, Y. Guhel, J.L. Trolet, P. Mary, A. Vivier, Christophe Gaquière, B. Boudart

Solid-State Electronics, 2017, 127, pp.13 - 19. ⟨10.1016/j.sse.2016.10.039⟩. ⟨hal-01646143⟩

  • Article dans une revue

A New Photomechanical Molecular Switch Based on a Linear π-Conjugated System

Stéphane Lenfant, Yannick Viero, Christophe Krzeminski, Dominique Vuillaume, Dora Demeter, I. L. Dobra, Maiténa Oçafrain, Philippe Blanchard, Jean Roncali, C. van Dick, Jérôme Cornil

We report the electron-transport properties of a new photoaddressable molecular switch. The switching process relies on a new concept based on linear π-conjugated dynamic systems, in which the geometry and, hence, the electronic properties of an oligothiophene chain can be reversibly modified by...

Journal of Physical Chemistry C, 2017, 121 (22), pp.12416-12425. ⟨10.1021/acs.jpcc.7b01240⟩. ⟨hal-02564470⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 6/2]

Raffaele Pisano

2017. ⟨hal-04511014⟩