Publicaciones

• Communication dans un congrès

Carrier generation and recombination dynamics and reliability of InGaN-based photodetectors for high power densities

C de Santi, M Meneghini, A Caria, Ezgi Dogmus, Malek Zegaoui, F Medjdoub, G Meneghesso, E Zanoni

12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-03298878⟩

• Poster de conférence

Frequency measurement using noise setup for III-nitrides based photodiode

Bandar Alshehri, Karim Dogheche, Abderrahim Ramdane, Didier Decoster, El Hadj Dogheche

12th International Conference on Nitride Semiconductors ICNS-12, Jul 2017, Strasbourg, France. ⟨hal-03549720⟩

• Poster de conférence

Design and simulation of InGaN/GaN p-i-n photodiodes

Mourad Elbar, Bandar Alshehri, Souad Tobbeche, El Hadj Dogheche

12th International Conference on Nitride Semiconductors ICNS-12, Jul 2017, Strasbourg, France. 2018. ⟨hal-03552772⟩

• Poster de conférence

Study of Zn(Sn,Ge)N2 for optoelectronic applications

N. Fèvre, Nathaniel Feldberg, Patrice Miska, El Hadj Dogheche, C. Licitra, Bérangère Hyot, A. Roule

12th International Conference on Nitride Semiconductors ICNS-12, Jul 2017, Strasbourg, France. ⟨hal-03553042⟩

• Communication dans un congrès

The effect of waveguide parameters on gan based S-bend Y-junction optical power divider

Retno Wigajatri Purnamaningsih, N.R. Poespawati, Tomy Abuzairi, Sasono Rahardjo, Maratul Hamidah, El Hadj Dogheche

GaN-based structures have attracted many researchers in developing photonic devices. These semiconductor structures can operate at high temperatures and high-power levels due to their mechanical hardness. So far, optical splitters design based on Y-junction splitters are widely used on the various...

2017 15th International Conference on Quality in Research (QiR): International Symposium on Electrical and Computer Engineering, Jul 2017, Nusa Dua, Indonesia. pp.353-356, 978-1-5090-6398-7, ⟨10.1109/QIR.2017.8168510⟩. ⟨hal-03560792⟩

• Communication dans un congrès

Characterization and modeling of transient self-heating in GaN HEMTs

Adrien Cutivet, Meriem Bouchilaoun, Ahmed Chakroun, Ali Soltani, Abdelatif Jaouad, François Boone, Hassan Maher

12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-02310127⟩

• Article dans une revue

Full Sputtering Deposition of Thin Film Solar Cells: A Way of Achieving High Efficiency Sustainable Tandem Cells?

J.-P. Vilcot, B. Ayachi, T. Aviles, P. Miska

Journal of Electronic Materials, 2017, 46 (11), pp.6523-6527. ⟨10.1007/s11664-017-5694-3⟩. ⟨hal-05034157⟩

• Poster de conférence

III-nitrides based electro-optic modulators

Bandar Alshehri, Mohammed El Gibari, Li Hong Wu, Dimitri Pavlidis, El Hadj Dogheche

III-nitride materials deposited on sapphire and silicon, are considered mature semi-conductorsfor applications in photonics and optoelectronics. Unlike highly temperature sensitive optical waveguides made on more traditional materials such as InP, Gallium Nitride (GaN) is a good candidate for...

International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France. . ⟨hal-02487284⟩

• Article dans une revue

Transformational fluctuation electrodynamics: application to thermal radiation illusion

Ahmed Alwakil, Myriam Zerrad, Michel Bellieud, Denis Veynante, Franck Enguehard, Nathalie Rolland, Sebastian Volz, Claude Amra

Thermal radiation is a universal property for all objects with temperatures above 0K. Every object with a specific shape and emissivity has its own thermal radiation signature; such signature allows the object to be detected and recognized which can be an undesirable situation. In this paper, we...

Optics Express, 2017, 25 (15), pp.17343. ⟨10.1364/OE.25.017343⟩. ⟨hal-01565224⟩

• Communication dans un congrès

AlN-based HEMTs grown on silicon substrate by NH3-MBE

Stephanie Rennesson, Fabrice Semond, M. Nemoz, Jeans Massies, Stéphane Chenot, Ludovic Largeau, Ezgi Dogmus, Malek Zegaoui, F Medjdoub

In this paper, AlN-based HEMTs on silicon are demonstrated using NH3-MBE. The spirit is to get the highest 2DEG density theoretically achievable in nitrides while keeping thin barrier thickness, which is mandatory to achieve high frequency performances. To do that, the strategy consists in growing...

12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-03298877⟩