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Affichage de 3081 à 3090 sur 16074

  • Article dans une revue

Experimental insight into the third-order intercepts and nonlinear distortion of GaN HEMTs

Mohammad A. Alim, Mayahsa M. Ali, Christophe Gaquière

This research is about investigating the third-order intercept point (TOI) and nonlinear distortion level (NDL) for two GaN HEMTs of different gate lengths with temperature and frequency. As a multi-biasing, input power, frequency and temperature-dependent term; the TOI point and as well as the...

International Journal of RF and Microwave Computer-Aided Engineering, 2021, 31 (2), 10 p. ⟨10.1002/mmce.22513⟩. ⟨hal-03321548⟩

  • Article dans une revue

Reducing image search time by improved BOVW with wavelet decomposition

Mohammed El Amin Kourtiche, Mohammed Beladgham, Abdelmalik Taleb-Ahmed

In the last decade, the bag of visual words (BOVW) has been used widely in image classification, image retrieval and has significantly improved the performance of CBIR system. In this paper we propose a new method to enhance BOVW using features obtained from wavelet decomposition in order to reduce...

Indonesian Journal of Electrical Engineering and Computer Science, 2021, 21 (2), pp.1201-1208. ⟨10.11591/ijeecs.v21.i2.pp1201-1208⟩. ⟨hal-03472229⟩

  • Article dans une revue

Thermoelectric properties of nanostructured porous-polysilicon thin films

Katir Ziouche, Ibrahim Bel-Hadj, Zahia Bougrioua

In this paper, we address the optimization of the electrical and thermoelectrical properties of nanostructured polysilicon material for integration in thermoelectric (TE) devices. In particular, we describe an original method to build a superficial and nanostructured porous polysilicon (POpSi) thin...

Nano Energy, 2021, 80, pp.105553. ⟨10.1016/j.nanoen.2020.105553⟩. ⟨hal-02990079⟩

  • Article dans une revue

Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Christophe Rodriguez, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier

In this paper, we report on the fabrication of a normally-off Al(Ga)N/GaN high electron mobility transistor with selective area sublimation under vacuum of the p type doped GaN cap layer. This soft method makes it possible to avoid damages otherwise induced by post processing with reactive ion...

Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩. ⟨hal-03035072⟩

  • Article dans une revue

Effect of damping on magnetic induced resonances in cross waveguide structures

Abdelkader Mouadili, El Houssaine El Boudouti, Abdellatif Akjouj, Housni Al-Wahsh, Bahram Djafari-Rouhani, L. Dobrzynski

We consider, in the frame of long-wavelength Heisenberg model, a simple magnetic device consisting of two dangling side stubs grafted at the same site along a waveguide. This simple structure is designed to obtain bound in continuum (BIC) modes, magnonic induced transparency (MIT) and magnonic...

Journal of Superconductivity and Novel Magnetism, 2021, 34 (2), pp.597-608. ⟨10.1007/s10948-020-05742-5⟩. ⟨hal-03322501⟩

  • Article dans une revue

2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Md. Abdul Kaium Khan, Mohammad Abdul Alim, Christophe Gaquière

For the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial. Herein, the temperature dependency of 2DEG for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT...

Microelectronic Engineering, 2021, 238, pp.111508. ⟨10.1016/j.mee.2021.111508⟩. ⟨hal-03124392⟩

  • Article dans une revue

Effect of In0.70Ga0.30As quantum dot insertion in the middle cell of InyGa1-yP/InxGa1-xAs/Ge triple-junction for solar cells

Abdelkader Aissat, Said Nacer, Jean-Pierre Vilcot

This paper focuses on the simulation and optimization of electrical and structural properties of high efficiency InGaP/InGaAs/Ge triple junction solar cells that incorporate In0.7Ga0.3As quantum dots with in the GaAs middle cell material. Current density-voltage (J-V), external quantum efficiency (...

Superlattices and Microstructures, 2021, 149, pp.106760 -. ⟨10.1016/j.spmi.2020.106760⟩. ⟨hal-03493013⟩

  • Article dans une revue

Anti-biofilm activity of dodecyltrimethylammonium chloride microcapsules against Salmonella enterica serovar Enteritidis and Staphylococcus aureus

Simon Khelissa, Adem Gharsallaoui, Jian Wang, Emilie Dumas, Alexandre Barras, Charafeddine Jama, Fouzia Jbilou, Noureddine Loukili, Nour-Eddine Chihib

Dodecyltrimethylammonium chloride (DTAC) was trapped into maltodextrins/pectin spray dried microcapsules to improve its activity against Salmonella enteritidis and Staphylococcus aureus biofilms. Two different microcapsules were prepared: uncomplexed DTAC-microcapsules (UDM), containing DTAC and...

Biofouling, 2021, 37 (1), pp.49-60. ⟨10.1080/08927014.2021.1873958⟩. ⟨hal-04770965⟩

  • Article dans une revue

Anti-biofilm activity of dodecyltrimethylammonium chloride microcapsules against Salmonella enterica serovar Enteritidis and Staphylococcus aureus

Simon Khelissa, Adem Gharsallaoui, Jian Wang, Emilie Dumas, Alexandre Barras, Charafeddine Jama, Fouzia Jbilou, Noureddine Loukili, Nour-Eddine Chihib

Dodecyltrimethylammonium chloride (DTAC) was trapped into maltodextrins/pectin spray dried microcapsules to improve its activity against Salmonella enteritidis and Staphylococcus aureus biofilms. Two different microcapsules were prepared: uncomplexed DTAC-microcapsules (UDM), containing DTAC and...

Biofouling, 2021, Biofouling, 37 (1), pp.49-60. ⟨10.1080/08927014.2021.1873958⟩. ⟨hal-03127835⟩

  • Article dans une revue

Intertrack surface losses in miniature coplanar waveguide on silicon-on-insulator

Jaouad Marzouk, Vanessa Avramovic, S. Arscott

Attenuation has been studied in different-sized coplanar waveguides (CPW) patterned onto silicon-on-insulator (SOI) for three different surfaces between the CPW tracks: a silicon dioxide/silicon interface, a hydrogen-terminated silicon surface, and a native oxide. For large-gap CPW (signal track...

Journal of Physics D: Applied Physics, 2021, 54 (4), pp.045102. ⟨10.1088/1361-6463/abbc36⟩. ⟨hal-03094146⟩