Publicaciones

• Communication dans un congrès

Analysis of right- and left-handed dispersive transmission lines at terahertz frequencies

Jean-Francois Lampin, T. Crepin, M. Perrin, M. Ternisien, L. Desplanque, F. Mollot, D. Lippens

2004, pp.101-102. ⟨hal-00140722⟩

• Communication dans un congrès

Modélisation et simulation de la technologie des MOS ultimes

Evelyne Lampin, Christophe Krzeminski, Tahsin Akalin, V. Cuny

Journées Nationales Nanoélectronique, 2004, Aussois, France. ⟨hal-00141007⟩

• Article dans une revue

EXAFS characterization of the gel leading to a hydrothermal deposition of PZT films

S. Euphrasie, S. Daviero-Minaud, Philippe Pernod

Integrated Ferroelectrics, 2004, 60, pp.117-130. ⟨hal-00140718⟩

• Communication dans un congrès

RF and noise properties of SOI MOSFETs, including the influence of a direct tunneling gate current

Francois Danneville, G. Pailloncy, Gilles Dambrine, B. Iniguez

2004, pp.103-110. ⟨hal-00154886⟩

• Article dans une revue

Hot carrier aging degradation phenomena in GaN based MESFETs

F. Rampazzo, G. Pierobon, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni

Microelectronics Reliability, 2004, 44, pp.1375-1380. ⟨hal-00154890⟩

• Communication dans un congrès

Microactuators and microstrip antenna for polarization diversity

L. Le Garec, I. Roch, Mohamed Himdi, R. Sauleau, O. Millet, L. Buchaillot

2004, pp.D16-D19. ⟨hal-00141027⟩

• Article dans une revue

Raman characterization of Mg+ ion-implanted GaN

B. Boudart, Y. Guhel, J. C. Pesant, P. Dhamelincourt, M. A. Poisson

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm−2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes...

Journal of Physics: Condensed Matter, 2003, 16 (2), pp.S49. ⟨10.1088/0953-8984/16/2/006⟩. ⟨hal-02936052⟩

• Thèse

Gravure par faisceau d'ions de films minces de titano-zirconate de plomp (PZT) : étude des dégradations engendrées et contribution à l'intégration aux microsystèmes, Ion beam etching of lead titanate-zirconate (PZT) thin films : study of damages induced and contribution to the integration in microsystems

Caroline Soyer

Ces travaux, relatifs à la gravure par faisceau d'ions de films minces de PZT, présentent un ensemble de résultats pouvant être scindés en deux parties. Tout d'abord, nous avons mené une étude originale dont le but est de tenter d'appréhender les mécanismes d'interactions entre..., First of all, we have carried out an original study of which the aim is to try to understand the mechanisms of interactions between an ion beam (reactive or not) and the PZT surface. We have underlined various degradations of material, as well microstructural as electrical. These damages evolve...

Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 2003. Français. ⟨NNT : 2003VALE0038⟩. ⟨hal-00162746⟩

• Pré-publication, Document de travail

Dispersive charge transport along the surface of an insulating layer observed by Electrostatic Force Microscopy

J. S. Lambert, G. de Loubens, C. Guthmann, M. Saint-Jean, Thierry Melin

We report the observation in the direct space of the transport of a few thousand charges submitted to atunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observedusing the same Electrostatic Force Microscope. During the time range accessible to our...

2003. ⟨hal-00000962⟩

• Chapitre d'ouvrage

Chapter 6 - Structural health monitoring evaluation tests

P. Lloyd, R. Pressland, J. Mcfeat, I. Read, P. Foote, J.P. Dupuis, E. O'Brien, L. Reithler, Sébastien Grondel, Christophe Delebarre, K. Levin, C. Boller, C. Biemans, W. Staszewski

STASZEWSKI W., BOLLER C., TOMLINSON G.R. Health monitoring of aerospace structures : smart sensor technologies and signal processing, John Wiley & Sons, pp.207-260, 2003. ⟨hal-00131715⟩