Publicaciones

• Communication dans un congrès

GaN devices for high performance RF power amplifier

Christophe Gaquière, Brahim Benbakhti, S. Boulay, N. Defrance, Damien Ducatteau, H. Gerard, J-C Gerbedoen, Bertrand Grimbert, Virginie Hoel, J. Lemaitre, Michel Rousseau, Ali Soltani, Jean-Claude de Jaeger, F. Medjoub, Raphaël Aubry, Charu Dua, Christian Brylinski, Didier Floriot, G. Lecoustre, Erwan Morvan, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage

2nd European Microwave Integrated Circuits Conference, EuMIC 2007, Oct 2007, Munich, Germany. ⟨hal-00367425⟩

• Communication dans un congrès

Laser doppler vibrometry for evaluating the piezoelectric coefficients d33 and d31 of PZT thin films

R. Herdier, D. Jenkins, El Hadj Dogheche, Denis Remiens, M. Sulk

Proceedings of the 19th International Symposium on Integrated Ferroelectrics, ISIF-19, 2007, Bordeaux, France. ⟨hal-00367387⟩

• Communication dans un congrès

Growth and characterization of AlInN/GaN field effect transistors

J.F. Carlin, F Medjdoub, M. Gonschorek, E. Feltin, M.A. Py, Christophe Gaquière, N. Grandjean, E. Kohn

Proceedings of the 7th International Conference of Nitride Semiconductors, ICNS-7, 2007, Las Vegas, NV, United States. ⟨hal-00367697⟩

• Autre publication scientifique

Fonctionnalités actives en optique intégrée à base de fils optiques en filière InP : application à la commutation optique

Marie Lesecq

2007. ⟨hal-00285757⟩

• Article dans une revue

Comparison of structural and electrical properties of PMN-PT films deposited on Si with different bottom electrodes

M. Detalle, Gang Wang, Denis Remiens, P. Ruterana, P. Roussel, B. Dkhil

PMN-PT (70/30) thin films were deposited by sputtering on silicon substrate covered with different bottom electrodes: TiOx/Pt and LaNiO3 (LNO). The bilayers TiOx/Pt are deposited by sputtering and the LNO layer by sol–gel. Whatever the bottom electrodes the perovskite phase appears at 400 °C; the...

Journal of Crystal Growth, 2007, 305 (1), pp.137-143. ⟨10.1016/j.jcrysgro.2007.04.020⟩. ⟨hal-00176607⟩

• Article dans une revue

Wide-band acousto-optic deflectors with high efficiency for visible range fringe pattern projector

Samuel Dupont, Jean-Claude Kastelik, F. Causa

Review of Scientific Instruments, 2007, 78, pp.105102-1-4. ⟨10.1063/1.2793775⟩. ⟨hal-00255746⟩

• Article dans une revue

Complete system for wireless powering and remote control of electrostatic actuators by inductive coupling

Philippe Basset, A. Kaiser, Bernard Legrand, D. Collard, L. Buchaillot

IEEE/ASME Transactions on Mechatronics, 2007, 12, pp.23-31. ⟨10.1109/TMECH.2006.886245⟩. ⟨hal-00255847⟩

• Article dans une revue

Silicon-molecules-metal junctions by transfert printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, X. Wallart, S. Pleutin, D. Vuillaume

Journal of Physical Chemistry C, 2007, 111, pp.7947-7956. ⟨10.1021/jp067846v⟩. ⟨hal-00255833⟩

• Article dans une revue

On-line tools for microscopic and macroscopic monitoring of microwave processing

S. Vaucher, P. Unifantowicz, C. Ricard, Luc Dubois, M. Kuball, J.-M. Catala-Civera, Dominique Bernard, M. Stampanoni, R. Nicula

Direct monitoring of temperature, chemistry and microstructure is required to understand microwave heating in more detail, in order to fully exploit the unique features this non-equilibrium processing method can offer. In this paper, we show first that microwave radiometry can be used to follow...

Physica B: Condensed Matter, 2007, 398 (2), pp.191-195. ⟨10.1016/j.physb.2007.04.064⟩. ⟨hal-00179746⟩

• Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at...

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩