Publicaciones

• Article dans une revue

Transmission gaps and sharp resonant states in the electronic transport through a simple mesoscopic device

Housni Al-Wahsh, El Houssaine El Boudouti, Bahram Djafari-Rouhani, L. Dobrzynski, Abdellatif Akjouj

A simple electronic circuit consisting of a single symmetric or asymmetric loop with dangling resonators is designed to obtain possibly large stop bands (where the propagation of electrons is forbidden). Contrary to all known systems of this kind, a spectral transmission gap of nonzero width occurs...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75 (12), pp.125313. ⟨10.1103/PhysRevB.75.125313⟩. ⟨hal-00283159⟩

• Article dans une revue

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Nicolas Sarazin, Olivier Jardel, Erwan Morvan, Raphaël Aubry, M. Laurent, M. Magis, Maurice Tordjman, M. Alloui, O. Drisse, J. Di Persio, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage, Nicolas Vellas, Christophe Gaquière, Didier Theron

AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an output power of 6.8 W/mm at 10 GHz with a gate length of 0.25 µm. A good...

Electronics Letters, 2007, 43 (23), pp.1317-1318. ⟨10.1049/el:20072598⟩. ⟨hal-00283494⟩

• Article dans une revue

Transient self-heating effects in multifinger AlGaN/GaN HEMTs, with metal airbridges

J. Kuzmik, S. Bychikhin, R. Lossy, H.J. Würfl, M.A. Di Forte-Poisson, J.P. Teyssier, Christophe Gaquière, D. Pogany

Solid-State Electronics, 2007, 51, pp.969-974. ⟨10.1016/j.sse.2007.04.001⟩. ⟨hal-00283496⟩

• Ouvrages

Advances in atomic-scale understanding of nanostructures

F. Cleri

Springer, pp.A86 (3), 275-312, 2007. ⟨hal-00362382⟩

• Chapitre d'ouvrage

Composants à semiconducteurs pour hyperfréquences

Gilles Dambrine, S. Bollaert

Techniques de l'Ingénieur, TI Sciences et Techniques, Paris, France, Dossier E2810, 23 p., 2007. ⟨hal-00362393⟩

• Communication dans un congrès

Distribution du SAR dans un phantom à proximité d'un téléphone cellulaire aux fréquences de 900 et 1800 MHz

S. Bri, O. Benzaim, A. Mamouni

TELECOM'2007 & 5èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2007, Maroc. pp.191-193. ⟨hal-00362413⟩

• Communication dans un congrès

High frequency ultrasonic estimation of C-crack defects in silicon nitride bearing balls

F. Deneuville, Mohamed Ourak, Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot, H. Carrerot

International Congress on Ultrasonics, ICU 2007, 2007, Austria. CD-ROM, Paper ID 1256, 4p., ⟨10.3728/ICUltrasonics.2007.Vienna.1256_deneuville⟩. ⟨hal-00362702⟩

• Communication dans un congrès

Investigation of wavelength GalnNAs 1300-1550 nm strained quantum wells on GaAs substrates

Abdelkader Aissat, Said Nacer, D. Berkani, Jean-Pierre Vilcot

1st WSEAS International Conference on Computational Chemistry, COMPUCHEM'07, Dec 2007, Cairo, Egypt. pp.115-119. ⟨hal-00362689⟩

• Article dans une revue

Examination of operation of PZT-Film-Si-substrate structures as pyroactive memory elements

S.L. Bravina, N.V. Morozovsky, Denis Remiens, Caroline Soyer

Ferroelectrics, 2007, 353, pp.193-201. ⟨10.1080/00150190701368158⟩. ⟨hal-00285651⟩

• Article dans une revue

Templates for LaAlO3 epitaxy on silicon

Pierre Boulenc, Isabelle Devos

As direct epitaxy of crystalline LaAlO3 on silicon has not been realized yet, we investigated the use of a template between the high-κ and the substrate. We performed calculations in the Density Functional Theory framework for two possible templates: a Sr0.5O monolayer and a 0.5 nm thick γ-Al2O3(0...

Microelectronics Reliability, 2007, 47 (4-5), pp.709-713. ⟨10.1016/j.microrel.2007.02.010⟩. ⟨hal-00285661⟩