Publicaciones

Affichage de 11441 à 11450 sur 16094


  • Communication dans un congrès

Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance

G. Larrieu, Emmanuel Dubois, Dmitri Yarekha, N. Breil, N. Reckinger, Xing Tang, J. Ratajczak, A. Laszcz

European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, _, France. ⟨hal-00361543⟩

  • Communication dans un congrès

THz quantum cascade lasers with micro TEM-horn antennas

Wilfried Maineult, Pierre Gellie, Alessio Andronico, Pascal Filloux, Giuseppe Leo, Carlo Sirtori, Stefano Barbieri, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, Harvey E. Beere, David Ritchie

Réunion du E-GDR THz, 2008, Paris, France. ⟨hal-00361534⟩

  • Communication dans un congrès

Temperature dependence of elastic constant measurements on thin films by picosecond ultrasonics

P. Emery, Arnaud Devos

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. ⟨hal-00361486⟩

  • Communication dans un congrès

Complete characterization in thin film using picosecond ultrasonics and nanostructured transducer

P.A. Mante, J.F. Robillard, Arnaud Devos, I. Roch-Jeune

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. ⟨hal-00361485⟩

  • Communication dans un congrès

Tunneling spectroscopy of semiconductor nanocrystals in superlattices

G. Mahieu, B. Grandidier, C. Delerue

Workshop on Statistical Physics and Low Dimensional Systems, 2008, Nancy, France. ⟨hal-00362016⟩

  • Communication dans un congrès

Imaging the electron local density of states inside buried semiconductor quantum rings

B. Hackens, F. Martins, M.G. Pala, H. Sellier, T. Ouisse, X. Wallart, S. Bollaert, A. Cappy, V. Bayot, S. Huant

29th Conference on the Physics of Semiconductors, Rio de Janeiro, July 27- August 1, 2008, Jul 2008, Rio de Janeiro, Brazil. ⟨hal-00392551⟩

  • Article dans une revue

Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap

N. Reckinger, Xing Tang, V. Bayot, Dmitri Yarekha, Emmanuel Dubois, S. Godey, X. Wallart, G. Larrieu, A. Łaszcz, J. Ratajczak, P.J. Jacques, J.P. Raskin

Journal of Applied Physics, 2008, 104 (10), pp.103523. ⟨10.1063/1.3010305⟩. ⟨hal-00356975⟩