Publicaciones

Affichage de 10501 à 10510 sur 16094


  • Article dans une revue

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y.M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski

Journal of Physics: Conference Series, 2009, 193, pp.012072-1-4. ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00473645⟩

  • Article dans une revue

Physical analysis of thermal effects on the optimization of GaN Gunn diodes

Xing Tang, Michel Rousseau, Christophe Dalle, Jean-Claude de Jaeger

Applied Physics Letters, 2009, 95, pp.142102-1-3. ⟨10.1063/1.3240873⟩. ⟨hal-00473636⟩

  • Article dans une revue

Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation

C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. Dejaeger, K. Cico, K. Frohlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩

  • Article dans une revue

InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess

M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, Christophe Gaquière, E. Kohn

IEEE Electron Device Letters, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩

  • Communication dans un congrès

Guides optiques 1,55 µm à base d'hétérostructures GaAsSbN/GaAs

N. Saadsaoud, Malek Zegaoui, Didier Decoster, Jean Chazelas, Kianhuan Tan, Soon Fatt Yoon, Wan Khai Loke, Satrio Wicaksono, Zhichuan Xu, Tien Khee Ng, Kim Luong Lew

TELECOM' 2009 & 6èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2009, Agadir, Maroc. pp.PA1-15, 1-3. ⟨hal-00480423⟩

  • Article dans une revue

Design considerations for 1.3 µm GaNAsSb-GaAs high speed and high quantum efficiency waveguide photodetectors

Z. Xu, Soon Fatt Yoon, Wan Khai Loke, Chunyong Ngo, Kianhuan Tan, Satrio Wicaksono, N. Saadsaoud, Didier Decoster, Malek Zegaoui, Jean Chazelas

The electrical and optical characteristics of a 1.3 μm GaNAsSb-GaAs p-i-n waveguide photodetector (WGPD), consisting of GaAs inner and AlxGa1-xAs outer cladding layers, were simulated using a lumped-element model and finite difference beam propagation method (BPM). The effect of multiple cladding...

Journal of Lightwave Technology, 2009, 27 (13), pp.2518-2524. ⟨10.1109/JLT.2009.2013323⟩. ⟨hal-00472779⟩

  • Communication dans un congrès

Investigation of SiGe HBT potentialities under cryogenic temperature

N. Waldhoff, Francois Danneville, Gilles Dambrine, B. Geynet, P. Chevalier

39th European Solid-State Device Research Conference, ESSDERC 2009, 2009, Greece. pp.121-124, ⟨10.1109/ESSDERC.2009.5331374⟩. ⟨hal-00474098⟩