Publicaciones

• Article dans une revue

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

S.R. Plissard, K.A. Dick, X. Wallart, P. Caroff

Applied Physics Letters, 2010, 96, pp.121901-1-3. ⟨10.1063/1.3367746⟩. ⟨hal-00548716⟩

• Article dans une revue

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC...

Applied Physics Letters, 2010, 97 (24), pp.241907. ⟨10.1063/1.3526720⟩. ⟨hal-00548720⟩

• Article dans une revue

Microwave modulation of terahertz quantum cascade lasers : a transmission-line approach

Wilfried Maineult, Lu Ding, Pierre Gellie, Pascal Filloux, Carlo Sirtori, Stefano Barbieri, Tahsin Akalin, Jean-Francois Lampin, Isabelle Sagnes, Harvey E. Beere, David Ritchie

We report on microwave impedance measurements of metal-metal ridge-waveguide terahertz quantum cascade lasers. Experimental data, recorded at 4 K in the 100 MHz–55 GHz range, are well reproduced by distributed-parameter transmission-line simulations, showing that the modulation cutoff is limited by...

Applied Physics Letters, 2010, 96, pp.021108-1-3. ⟨10.1063/1.3284518⟩. ⟨hal-00548728⟩

• Communication dans un congrès

Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT

Laurent Chusseau, J. Torres, P. Nouvel, H. Marinchio, L. Varani, Jean-Francois Lampin, S. Bollaert, Yannick Roelens, D. Dolfi

OPTO, 2010, San Francisco, United States. pp.760816, ⟨10.1117/12.846874⟩. ⟨hal-02443155⟩

• Article dans une revue

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

T. Sadi, Jean-Luc Thobel

We present a three-dimensional (3D) semi-classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two-dimensional (2D) models. The advantages of our model, in terms of accuracy in...

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2010, 23, pp.200-214. ⟨10.1002/jnm.735⟩. ⟨hal-00549480⟩

• Article dans une revue

Optical response of resonator induced plasmon filters : nanometric diatomic structures

G.H. Cocoletzi, M.A. Palomino-Ovando, L. Dobrzynski, Bahram Djafari-Rouhani, Abdellatif Akjouj

Superlattices and Microstructures, 2010, 48, pp.380-387. ⟨10.1016/j.spmi.2010.07.011⟩. ⟨hal-00549441⟩

• Article dans une revue

High-speed programming of nanowire-gated carbon-nanotube memory devices

G. Agnus, A. Filoramo, S. Lenfant, D. Vuillaume, J.P. Bourgoin, Vincent Derycke

Small, 2010, 6, pp.2659-2663. ⟨10.1002/smll.201001293⟩. ⟨hal-00548969⟩

• Article dans une revue

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors

C. Thelander, K.A. Dick, M.T. Borgström, L.E. Fröberg, P. Caroff, H.A. Nilsson, L. Samuelson

Nanotechnology, 2010, 21, pp.205703-1-9. ⟨10.1088/0957-4484/21/20/205703⟩. ⟨hal-00548956⟩

• Article dans une revue

Effect of on band alignment of compressively strained Ga1-xInxNyAs1-y-zSbz/GaAs quantum well structures

A. Aissat, S. Nacer, M. Seghilani, Jean-Pierre Vilcot

Physica E: Low-dimensional Systems and Nanostructures, 2010, 43, pp.40-44. ⟨10.1016/j.physe.2010.06.016⟩. ⟨hal-00552029⟩

• Article dans une revue

Electron beam nanolithography in AZnLOF 2020

E. Herth, P. Tilmant, M. Faucher, M. François, Christophe Boyaval, Francois Vaurette, Y. Deblock, Bernard Legrand, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.2057-2060. ⟨10.1016/j.mee.2009.12.079⟩. ⟨hal-00548989⟩