Publications

• Communication dans un congrès

Band gaps in phoXonic silicon crystal slab

Yan Pennec, El Houssaine El Boudouti, Bahram Djafari-Rouhani, Jerome O. Vasseur, Driss Bria, Youssef El Hassouani, C. Li, Sarah Benchabane, Vincent Laude, N. Papanikolaou

13th International Conference on Phonon Scattering in Condensed Matter, PHONONS 2010, Apr 2010, Taipei, Taiwan. pp.ThP24. ⟨hal-00541781⟩

• Communication dans un congrès

Design and fabrication of a 45GHz MMIC oscillator based on InP/GaAsSb/InP DHBT process

Sylvain Laurent, Antonio Augusto Lisboa de Souza, Jean-Christophe Nallatamby, Michel Prigent, Virginie Nodjiadjim, Muriel Riet

This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was fabricated by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-μm-long two-finger emitter. The complete nonlinear modeling of…

Workshop on (INMMIC) 2010, Apr 2010, Göteborg, Sweden. pp.54-57, ⟨10.1109/INMMIC.2010.5480139⟩. ⟨hal-00606461⟩

• Communication dans un congrès

Cascaded acousto-optical deflectors for optical trapping

Jean-Claude Kastelik, Samuel Dupont, Michel Pommeray, Joseph Gazalet

European Optical Society Annual Meeting, EOSAM 2010, 2010, Paris, France. pp.TOM1_3455_07, 101-102. ⟨hal-00800864⟩

• Communication dans un congrès

Nonequilibrium fluctuation relations in a quantum coherent conductor

S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, K. Saito, Y. Utsumi, A.C. Gossard

30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. pp.329-330, ⟨10.1063/1.3666387⟩. ⟨hal-00800869⟩

• Communication dans un congrès

Hexagonal boron nitride nanowalls synthesized by unbalanced RF magnetron sputtering

B. Ben Moussa, J. d'Haen, C. Borschel, M. Saitner, A. Soltani, V. Mortet, C. Ronning, M. d'Olieslaeger, H.G. Boyen, K. Haenen

Materials Research Society Fall Meeting, MRS Fall 2010, Symposium CC : Boron and boron compounds - From fundamentals to applications, 2010, Boston, MA, United States. pp.mrsf10-1307-cc06-09, 1-6, ⟨10.1557/opl.2011.505⟩. ⟨hal-00800885⟩

• Article dans une revue

Experimental demonstration of the negative refraction of a transverse elastic wave in a two-dimensional solid phononic crystal

B. Morvan, A. Tinel, Anne-Christine Hladky, Jerome O. Vasseur, Bertrand Dubus

Applied Physics Letters, 2010, 96, pp.101905-1-3. ⟨10.1063/1.3302456⟩. ⟨hal-00548558⟩

• Article dans une revue

Testing the temperature limits of GaN-based HEMT devices

D. Maier, M. Alomari, N. Grandjean, J.F. Carlin, M.A. Di Forte-Poisson, C. Dua, A. Chuvilin, David Troadec, Christophe Gaquière, U. Kaiser, S.L. Delage, E. Kohn

IEEE Transactions on Device and Materials Reliability, 2010, 10, pp.427-436. ⟨10.1109/TDMR.2010.2072507⟩. ⟨hal-00579038⟩

• Article dans une revue

Modeling and Simulation of the Failure and Stiffness Degradation of a Graphite Epoxy in a Three Point Bending Test

E. Irhirane, M. Abousaleh, J. Echaabi, M. Hattabi, A. Saouab, M. Bensalah

Journal of Engineering Materials and Technology, 2010, 132 (3), pp.031013. ⟨hal-01942752⟩

• Communication dans un congrès

General solutions to the contact problem of two spheres with friction

Vladislav Aleshin, Koen van den Abeele

15th International Conference on Nonlinear Elasticity in Materials, ICNEM 2010, 2010, Otranto, Italy. ⟨hal-00819459⟩

• Article dans une revue

Characterization of ytterbium silicide formed in ultra high vacuum

Adam Laszcz, Jacek Ratajczak, Andrzej Czerwinski, Jerzy Katcki, Vesna Srot, Fritz Phillipp, Peter A. van Aken, Dmitri Yarekha, Nicolas Reckinger, Guilhem Larrieu, Emmanuel Dubois

The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions…

Journal of Physics: Conference Series, 2010, 209 : 16th International Conference on Microscopy of Semiconducting Materials, pp.012056 (1--4). ⟨10.1088/1742-6596/209/1/012056⟩. ⟨hal-00549559⟩