Publications

• Communication dans un congrès

75-nm-T-shaped-gate InAlN/AlN/GaN HEMT on sapphire with 100 GHz cutoff frequency

F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, N. Ketteniss, H. Behmenburg, M. Eickelkamp, A. Vescan, C. Giesen, M. Heuken

6th European Microwave Integrated Circuits Conference, EuMIC 2011, 2011, Manchester, United Kingdom. pp.136-139. ⟨hal-00800110⟩

• Ouvrages

Electromagnetic Reverberation Chambers

Philippe Besnier, Bernard Démoulin

Dedicated to a complete presentation on all aspects of reverberation chambers, this book provides the physical principles behind these test systems in a very progressive manner. The detailed panorama of parameters governing the operation of electromagnetic reverberation chambers details various…

ISTE/Wiley, pp.400, 2011, P.N.Favennec. ⟨hal-00640424⟩

• Communication dans un congrès

Characterization and modeling for the piezoelectric actuator of AlGaN/GaN-resonators

Achraf Ben Amar, Marc Faucher, Bertrand Grimbert, Virginie Brandli, Lionel Buchaillot, Christophe Gaquière, Didier Theron

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00800035⟩

• Communication dans un congrès

Novel high-resolution localization method of mobile devices in non-line-of-sight scenarios

D.P. Gaillot, P. Stefanut, M. Liénard, Pierre Degauque

Final COST 2100 Management Committee Meeting, 2011, Paris, France. ⟨hal-00961423⟩

• Article dans une revue

High frequency ultrasound, a tool for elastic properties measurement of thin films fabricated on silicon

Pierre Campistron, Julien Carlier, N. Saad, J. Gao, Malika Toubal, L. Dupont, Georges Nassar, Bertrand Nongaillard

The main goal of this work is to develop an ultrasonic high frequency measurement method for the characterization of thin layers. The development of high frequency acoustic transducers for longitudinal waves and shear waves on silicon has made it possible to develop characterization of thin films…

Advanced Materials Research, 2011, 324, pp.277-281. ⟨10.4028/www.scientific.net/AMR.324.277⟩. ⟨hal-00795917⟩

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current…

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩

• Article dans une revue

Radiation pattern measurements of an integrated transverse electromagnetic horn antenna using a terahertz photomixing setup

L. Prissette, Guillaume Ducournau, Tahsin Akalin, Emilien Peytavit, Alexandre Beck, Mohammed Zaknoune, Damien Ducatteau, Jean-Francois Lampin

We report experimental radiation pattern measurements of a transverse electromagnetic horn antenna at the millimetric/sub-millimetric frontier (280–350 GHz). The antenna is fed by a monolithically integrated uni-travelling-carrier photodiode illuminated by an optical beatnote (photomixing) at 1.55…

IEEE Microwave and Wireless Components Letters, 2011, 21, pp.49-51. ⟨10.1109/LMWC.2010.2088383⟩. ⟨hal-00572643⟩

• Article dans une revue

Thickness effect on nanoscale electromechanical activity in Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films studied by piezoresponse force microscopy

A. Ferri, M. Detalle, J.F. Blach, M. Warenghem, Denis Remiens, R. Desfeux

0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) ferroelectric thin films with thickness ranging from 28 to 110 nm were sputter deposited onto LaNiO3/SiO2/Si substrates. Optical properties were determined by spectroscopic ellipsometry. We found B = 4.6 and λ0 = 209 nm, which is consistent for all PMN–PT…

Journal of Applied Physics, 2011, 110 (10), pp.104101. ⟨10.1063/1.3660526⟩. ⟨hal-00783533⟩

• Article dans une revue

InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

G. Moschetti, N. Wadefalk, P.A. Nilsson, Yannick Roelens, A. Noudeviwa, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, J. Grahn

Solid-State Electronics, 2011, 64, pp.47-53. ⟨10.1016/j.sse.2011.06.048⟩. ⟨hal-00639807⟩

• Article dans une revue

Effect of dimensional parameters on the current of MSM photodetector

Abdel-Djawad Boumediène Zebentout, Zouaoui Bensaad, Abdelkader Aissat, Didier Decoster

In this work, we present the influence of dimensional parameters on dark current and photocurrent of the metal–semiconductor–metal photodetector (MSM). MSM photodetectors of different sizes have been fabricated on GaAs (NID). The active area of MSM samples varies between 1×1 μm2 and 10×10 μm2 with…

Microelectronics Journal, 2011, 42, pp.1006-1009. ⟨10.1016/j.mejo.2011.05.002⟩. ⟨hal-00639881⟩