Publications

• Communication dans un congrès

COMPTERA : Ultra-fast quantum-well mid-infrared photodetectors: time-resolved photocurrent and optical saturation by femtosecond laser excitation

Victor Merupo, Djamal Gacemi, P. Balla, Jean-Francois Lampin, Carlo Sirtori, Emilien Peytavit, Stefano Barbieri

Journées scientifiques du PEPR électronique, Mar 2025, Paris, France. ⟨hal-05158427⟩

• Article dans une revue

A Universal Implementation Approach for Multivalued Logic Gates Based on Negative Transconductance in Series-Connected Two-Dimensional Transistors

Guangchao Zhao, Wanting Wen, Keyi Liao, Philippe Coquet, Xingli Wang, Mingqiang Huang, Beng Kang Tay

Multiple-valued logic (MVL) is highly desired for algebra, logic, and artificial intelligence due to its higher information density. However, its practical adoption has been hindered for decades by extensive hardware requirements. Two-dimensional (2D) materials with exceptional electronic…

ACS Nano, 2025, 19 (27), pp.24961-24971. ⟨10.1021/acsnano.5c04182⟩. ⟨hal-05166793⟩

• Communication dans un congrès

Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTs

Lyes Ben-Hammou, François Grandpierron, Elodie Carneiro, Katir Harrouche, Etienne Okada, Gilles Patriarche, Farid Medjdoub

This study investigates the impact of short-term hightemperature operating life (HTOL) reliability testing on the trapping behavior and power performance of carbon-doped AlN/GaN/AlGaN High Electron Mobility Transistors (HEMTs). HTOL stress can lead to significant degradation in key performance…

2025 IEEE International Reliability Physics Symposium (IRPS 2025), Mar 2025, Monterey, CA, United States. ⟨10.1109/irps48204.2025.10983377⟩. ⟨hal-05344709⟩

• Article dans une revue

Nonlinear modeling of AlN/GaN HEMT accounting for self-biasing effect during RF step stress: analysis and hard-SOA

Nasri Said, Damien Saugnon, K. Harrouche, F Medjdoub, N. Labat, N. Malbert, Jean-Guy Tartarin

In this study, we investigate the non-linear (NL) behavior of AlN/GaN HEMT technologies under gain compression when submitted to 10 GHz single-tone RF-step stress, which is crucial for millimetre-wave power application robustness. We evaluate AlN/GaN transistors, targeting high-power amplifiers…

Microelectronics Reliability, 2025, 169, pp.115742. ⟨10.1016/j.microrel.2025.115742⟩. ⟨hal-05065556⟩

• Brevet

Acoustic tweezers

Antoine Riaud, Jean-Louis Thomas, Michael Baudoin, Olivier Bou Matar

États-Unis, N° de brevet: US12179192 (B2) 2024-12-31. 2024, N° de priorité : US201816085424 20180914 ; US202318211184 20230616 ; WO2016EP55611 20160315 - N° de demande : US202318211184 20230616. ⟨hal-05698659⟩

• Article dans une revue

Broadband and omnidirectional attenuation of bulk waves in transversely isotropic soil by cross-like metamaterials

Runcheng Cai, Yabin Jin, Yan Pennec, Bahram Djafari-Rouhani, Timon Rabczuk, Xiaoying Zhuang

Metamaterials with bandgap properties have been widely studied and applied in the attenuation of surface and bulk waves propagating in the soil. However, most of the studies consider soil as the isotropic medium and ignore the general anisotropy property from the practical point of view. In this…

Journal of Applied Physics, 2024, 136 (24), ⟨10.1063/5.0239151⟩. ⟨hal-04862379⟩

• Brevet

Device and method for continuous-time energy calculation of an analog signal

Antoine Frappe, Benoit Larras, Andreia Cathelin, Soufiane Mourrane

United States, Patent n° : US2024429934 (A1) 2024-12-26. 2024, Numéro(s) de priorité: EP20230305983 20230621 - Numéro de demande: US202418748787 20240620. ⟨hal-05156540⟩

• Brevet

Device and method for continuous-time energy calculation of an analog signal

Antoine Frappe, Benoit Larras, Andreia Cathelin, Soufiane Mourrane

Unknown Region, Patent n° : EP4482036 (A1) 2024-12-25. 2024, Numéro(s) de priorité: EP20230305983 20230621 - Numéro de demande: EP20230305983 20230621. ⟨hal-05156511⟩

• Article dans une revue

Exploring the impact of thermal fluctuations on continuous models of adhesion

Claudia Binetti, Andrea Cannizzo, Giuseppe Florio, Nicola M Pugno, Giuseppe Puglisi, Stefano Giordano

International Journal of Engineering Science, 2024, 208, ⟨10.1016/j.ijengsci.2024.104194⟩. ⟨hal-04862968⟩

• Article dans une revue

Electroisomerization blinking of an azobenzene derivative molecule

Sylvie Godey, Hugo Therssen, David Guérin, Thierry Melin, Stéphane Lenfant

Abstract We report here the reversibility and bistability of the switching behavior in an azobenzene derivative induced by the bias applied by a Scanning-Tunneling Microscopy (STM) tip, at low temperature and in ultra-high vacuum environment. This cis-to-trans and trans-to-cis switching were…

Nanotechnology, 2024, ⟨10.1088/1361-6528/ada2f3⟩. ⟨hal-04857547⟩