Publications

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or…

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to…

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• Article dans une revue

Low power sessile droplets actuation via modulated surface acoustic waves

Michael Baudoin, Philippe Brunet, Olivier Bou Matar, Etienne Herth

Low power actuation of sessile droplets is of primary interest for portable or hybrid lab-on-a-chip and harmless manipulation of biofluids. In this paper, we show that the acoustic power required to move or deform droplets via surface acoustic waves can be substantially reduced through the forcing…

Applied Physics Letters, 2012, 100, pp.154102-1-4. ⟨10.1063/1.3701725⟩. ⟨hal-00787356⟩

• Article dans une revue

Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films

J. Ge, G. Pan, Denis Remiens, Y. Chen, F. Cao, X.L. Dong, G.S. Wang

Applied Physics Letters, 2012, 101, pp.112905-1-3. ⟨10.1063/1.4752726⟩. ⟨hal-00788341⟩

• Article dans une revue

Influence of a superficial field of residual stress on the propagation of surface waves - Applied to the estimation of the depth of the superficial stressed zone

Marc Duquennoy, Mohammadi Ouaftouh, J. Deboucq, Jean-Etienne Lefebvre, Frédéric Jenot, Mohamed Ourak

Applied Physics Letters, 2012, 101, pp.234104-1-3. ⟨10.1063/1.4768434⟩. ⟨hal-00790364⟩

• Article dans une revue

Mechanism of formation of the misfit dislocations at the cubic materials interfaces

Y. Wang, P. Ruterana, S. Kret, Jie Chen, S. El Kazzi, L. Desplanque, X. Wallart

Applied Physics Letters, 2012, 100, pp.262110-1-5. ⟨10.1063/1.4731787⟩. ⟨hal-00787021⟩

• Communication dans un congrès

Surface engineering by plasma : spectroscopic characterization of an N2-Ar discharge

A. Annusova, J. Kristof, C. Foissac, P. Supiot, P. Veis

14th Conference of Doctoral Students, ELITECH'12, 2012, Bratislava, Slovakia. ⟨hal-00798839⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of N2-Ar mixture discharge created by a RF helical coupling device - II. Vibrational distribution of N2(C3Πu, v') state

A. Annusova, C. Foissac, J. Kristof, P. Veis, P. Supiot

Plasma Sources Science and Technology, 2012, 21, pp.055022-1-11. ⟨hal-00790407⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of N2-Ar mixture discharge created by a RF helical coupling device - I. Kinetics of N2(B3Πg) and N2(C3Πu) states

C. Foissac, J. Kristof, A. Annusova, P. Veis, P. Supiot

Plasma Sources Science and Technology, 2012, 21, pp.055021-1-11. ⟨hal-00790405⟩

• Communication dans un congrès

Vibrational distribution function of N2(C3Πu, v') state in N2-Ar discharge created by a RF helical coupling device

A. Annusova, C. Foissac, J. Kristof, P. Veis, P. Supiot

XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG 2012, 2012, Viana do Castelo, Portugal. paper P1.1.10, 1-2. ⟨hal-00802624⟩