Publications

• Article dans une revue

Joint Carrier Frequency Offset and Channel Estimation for OFDM Systems via the EM Algorithm in the Presence of Very High Mobility

Eric Pierre Simon, Laurent Ros, Hussein Hijazi, Mounir Ghogho

In this paper, the problem of joint carrier frequency offset (CFO) and channel estimation for OFDM systems over the fast time-varying frequency-selective channel is explored within the framework of the expectation-maximization (EM) algorithm and parametric channel model. Assuming that the path…

IEEE Transactions on Signal Processing, 2012, 60 (2), pp.754-765. ⟨hal-00660684⟩

• Communication dans un congrès

On mechanics and architecture during the Renaissance: Galilean Trattato di Fortificazione

Raffaele Pisano

RCTHS Research Lectures Series, RCTHS centre, University of West Bohemia in Pilsen, Czech Republic, Jan 2012, Pilsen, République Tchèque, Czech Republic. ⟨hal-04518668⟩

• Communication dans un congrès

Modulateur à base de polymères électro-optiques

Pierre Le Barny, Hong Wu Li, Jean-Pierre Vilcot, Dominique Bosc, Fabrice Odobel, Chantal Andraud, Alain Fort, Pierre Bonnardel, Philippe Chanclou

Objectifs du projet ModPol : Synthèse et caractérisation de polymères électrooptiques - performants - stables chimiquement et photochimiquement - Mise au point des procédés technologiques pour réaliser - un modulateur de phase - un modulateur de type Mach Zehnder - Évaluation des potentialités de…

Grand Colloque ANR-STIC 2012, Jan 2012, Lyon, France. ⟨hal-01251545⟩

• Article dans une revue

An Historical Inquiry on Geometry in Relativity: Reflections on Early Relationship Geometry–Physics (Part II)

Raffaele Pisano, Ferdinando Casolaro

Journal of History Research, 2012, 2 (1), pp.57-65. ⟨hal-04507941⟩

• Article dans une revue

Tight-binding calculations of the optical properties of HgTe nanocrystals

Guy Allan, Christophe Delerue

We propose a tight-binding model of HgTe which gives an accurate band structure in a wide energy range compared to recent ab initio calculations. The inverted band structure near the Fermi level and its temperature dependence are also very well described. Using this parametrization, we study the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (16), pp.165437. ⟨10.1103/PhysRevB.86.165437⟩. ⟨hal-00787874⟩

• Article dans une revue

Experimental evidence of zero-angle refraction and acoustic wave-phase control in a two-dimensional solid/solid phononic crystal

Jerome O. Vasseur, B. Morvan, A. Tinel, N. Swinteck, Anne-Christine Hladky, P.A. Deymier

The square symmetry of the equifrequency contour of longitudinal waves in a solid/solid two-dimensional phononic crystal (PC) is shown through numerical calculations and experiments to lead to peculiar propagation phenomena. A slab of steel/epoxy PC immersed in water refracts incident longitudinal…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (13), pp.134305. ⟨10.1103/PhysRevB.86.134305⟩. ⟨hal-00786894⟩

• Article dans une revue

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

• Article dans une revue

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

• Article dans une revue

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩

• Article dans une revue

High power density performances of SiGe HBT from BiCMOS technology at W-band

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière

IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩