Publications

• Communication dans un congrès

New adaptive architectures of coding and modulation UWB for infrastructure vehicle communication

Khadija Hamidoun, Raja Elassali, Yassin El Hillali, F. Elbahharr, Atika Rivenq

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. paper ID 67, 251-254. ⟨hal-00802534⟩

• Article dans une revue

Effect of heterostructure design on current-voltage characteristics in AlxGa1-xN/GaN double-barriers resonant tunneling diode

Mohamed Boucherit, Ali Soltani, Michel Rousseau, J.L. Farvacque, Jean-Claude de Jaeger

Ballistic transport in double-barriers resonant tunneling diodes based on GaN is investigated in this work using the non-equilibrium Green's functions formalism. The electron density of states, the electrons concentration, and the current-voltage characteristics are calculated taking into…

Journal of Applied Physics, 2012, 112 (11), pp.114305. ⟨10.1063/1.4767382⟩. ⟨hal-00787875⟩

• Article dans une revue

Multifunctional solid/solid phononic crystal

N. Swinteck, Jerome O. Vasseur, Anne-Christine Hladky, Charles Croënne, S. Bringuier, P.A. Deymier

A two-dimensional, solid/solid phononic crystal (PC) comprised a square array of steel cylinders in epoxy is shown to perform a variety of spectral, wave vector, and phase-space functions. Over a range of operating frequencies, the PC’s elastic band structure shows uniquely shaped equifrequency…

Journal of Applied Physics, 2012, 112 (2), pp.024514. ⟨10.1063/1.4739264⟩. ⟨hal-00786892⟩

• Communication dans un congrès

Cold plasma technology for fast immobilization of enzyme

A. Elagli, Céline Vivien, K. Belhacene, A. Treizebre, P. Supiot, P. Dhulster, R. Froidevaux

4th International Conference on Plasma Medicine, ICPM 4, 2012, Orléans, France. ⟨hal-00798841⟩

• Article dans une revue

Generalized interface models for transport phenomena : unusual scale effects in composite nanomaterials

F. Pavanello, F. Manca, Pier Luca Palla, S. Giordano

The effective transport properties of heterogeneous nanoscale materials and structures are affected by several geometrical and physical factors. Among them, the presence of imperfect interfaces plays a central role being often at the origin of the scale effects. To describe real contacts between…

Journal of Applied Physics, 2012, 112 (8), pp.084306. ⟨10.1063/1.4759017⟩. ⟨hal-00787479⟩

• Article dans une revue

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

K. Pantzas, G. Patriarche, David Troadec, S. Gautier, T. Moudakir, S. Suresh, L. Largeau, O. Mauguin, P. L. Voss, A. Ougazzaden

Using elastic scattering theory we show that a small set of energy dispersive x-ray spectroscopy (EDX) measurements is sufficient to experimentally evaluate the scattering function of electrons in high-angle annular dark field scanning transmission microscopy (HAADF-STEM). We then demonstrate how…

Nanotechnology, 2012, 23, pp.455707-455716. ⟨10.1088/0957-4484/23/45/455707⟩. ⟨hal-00747027⟩

• Article dans une revue

Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications

Etienne Herth, H Desré, Emmanuelle Algré, Christiane I. Legrand, Tuami Lasri

The aim of this work is to determine optimal deposition parameters of silicon nitride for optical applications. The authors present the investigation of hydrogenated amorphous silicon nitride SiNx:H deposited by the low temperature PECVD method in high frequency reactors. The study of hydrogen…

Microelectronics Reliability, 2012, 52 (1), pp.141-146. ⟨10.1016/j.microrel.2011.09.004⟩. ⟨hal-02300326⟩

• Article dans une revue

Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors

N. Clement, G. Larrieu, Emmanuel Dubois

Investigation of low-frequency noise in nanoscale Schottky-barrier (SB)-based field-effect transistors (SB-FETs) is of prime importance due to its large amplitude in emerging bottom-up devices. In addition, noise can give additional information on charge transport mechanisms. In this paper, we…

IEEE Transactions on Electron Devices, 2012, 59 (1), pp.180-187. ⟨10.1109/TED.2011.2169676⟩. ⟨hal-00787365⟩

• Article dans une revue

Réalisation de transistors fibreux électroniques et de circuits électroniques textiles

X. Tao, V. Koncar, C. Dufour

L'Actualité Chimique, 2012, 360-361, pp.65-68. ⟨hal-00806590⟩

• Communication dans un congrès

C-SVM versus CRF classifier for human activity recognition

M.B. Abidine, B. Fergani, Laurent Clavier

1st International Conference on Electrical Engineering and Control Applications, ICEECA 2012, 2012, Khenchela, Algeria. paper CS-254, 1-4. ⟨hal-00806592⟩