Publications

Affichage de 7911 à 7920 sur 16231


  • Communication dans un congrès

A GaAs MMIC single-chip RF-MEMS switched tunable LNA

R. Malmqvist, C. Samuelsson, S. Reyaz, A. Gustafsson, S. Seok, M. Fryziel, P.A. Rolland, B. Grandchamp, R. Baggen

35th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2013, 2013, Monterey, CA, United States. 4 p., ⟨10.1109/CSICS.2013.6659199⟩. ⟨hal-00906043⟩

  • Article dans une revue

Free-ultrasonic waves in multilayered piezoelectric plates : an improvement of the Legendre polynomial approach for multilayered structures with very dissimilar materials

J.G. Yu, Jean-Etienne Lefebvre, Y.Q. Guo

Composites Part B: Engineering, 2013, 51, pp.260-269. ⟨10.1016/j.compositesb.2013.03.024⟩. ⟨hal-00815014⟩

  • Communication dans un congrès

Biomechanical measurement of DNA degradation under therapeutic radiation beams by silicon nanotweezers and associated fluidic cavity

G. Perret, T. Lacornerie, M. Kumemura, N. Lafitte, H. Guillou, L. Jalabert, E. Lartigau, T. Fujii, F. Cleri, H. Fujita, D. Collard

7th International Conference on Microtechnologies in Medicine and Biology, MMB 2013, 2013, Marina del Rey, CA, United States. paper T3P.04, 2 p. ⟨hal-00877774⟩

  • Communication dans un congrès

Ajout d'un recuit dédié à la réduction de la résistance extrinsèque de base dans les TBH SiGe:C DPSA-SEG

Elodie Canderle

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957780⟩

  • Communication dans un congrès

Digital-to-analog and analog-to-digital conversion with metal oxide memristors for ultra-low power computing

L.G. Gao, F. Merrikh-Bayat, F. Alibart, X.J. Guo, B.D. Hoskins, K.T. Cheng, D.B. Strukov

9th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2013, 2013, New-York, NY, United States. pp.19-22, ⟨10.1109/NanoArch.2013.6623031⟩. ⟨hal-00909953⟩

  • Communication dans un congrès

Bending effect on frequency performance of InAlAs/InGaAs HEMT transferred on flexible substrate

S. Bollaert, J.S. Shi, Nicolas Wichmann, Yannick Roelens

71st Annual Device Research Conference, DRC 2013, 2013, Notre Dame, IN, United States. paper III-31, 111-112, ⟨10.1109/DRC.2013.6633818⟩. ⟨hal-00904681⟩

  • Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩