Publications

Affichage de 6201 à 6210 sur 16231


  • Article dans une revue

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, J.C. Dejaeger, Nathalie Malbert

Microelectronics Reliability, 2016. ⟨hal-01718762⟩

  • Communication dans un congrès

InAs/Al<sub>0.4</sub>Ga<sub>0.6</sub>Sb side gated vertical TFET on GaAs substrate

Vinay Chinni, Mohammed Zaknoune, X. Wallart, L. Desplanque

  • Article dans une revue

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors

Nicolas Herbecq, Isabelle Roch-Jeune, Astrid Linge, Malek Zegaoui, Pierre-Olivier Jeannin, Nicolas Clément, Jean-Paul Rouger, F Medjdoub

Physica Status Solidi A (applications and materials science), 2016, 213 (4), pp.873--877. ⟨10.1002/pssa.201532572⟩. ⟨hal-02277752⟩

  • Article dans une revue

AlN/IDT/AlN/Sapphire SAW Heterostructure for High-Temperature Applications

Ouarda Legrani, Thierry Aubert, Omar Elmazria, Ausrine Bartasyte, Pascal Nicolay, Abdelkrim Talbi, Pascal Boulet, Jaafar Ghanbaja, Denis Mangin

Recent studies have evidenced that Pt/AlN/Sapphire SAW devices are promising for high-temperature high-frequency applications. However, they cannot be used above 700°C in air atmosphere as the Pt interdigital transducers (IDTs) agglomerate and the AlN layer oxidizes in such conditions. In this…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2016, 63 (6), pp.898 - 906. ⟨10.1109/TUFFC.2016.2547188⟩. ⟨hal-01525494⟩