Publications

• Pré-publication, Document de travail

Impulsive Multivariate Interference Models for IoT Networks

Ce Zheng, Malcolm Egan, Laurent Clavier, Gareth W. Peters, Jean-Marie Gorce

Device density in wireless internet of things (IoT) networks is now rapidly increasing and is expected to continue in the coming years. As a consequence, interference is a crucial limiting factor on network performance. This is true for all protocols operating on ISM bands (such as SigFox and LoRa…

2020. ⟨hal-02533821⟩

• Article dans une revue

Highly efficient conversion of the nitroarenes to amines at the interface of a ternary hybrid containing silver nanoparticles doped reduced graphene oxide/ graphitic carbon nitride under visible light

Anurag Kumar, Bappi Paul, Rabah Boukherroub, Suman Jain

Journal of Hazardous Materials, 2020, 387, pp.121700. ⟨10.1016/j.jhazmat.2019.121700⟩. ⟨hal-03090040⟩

• Article dans une revue

Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures

Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, F Medjdoub

Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing the vertical breakdown voltage above 1200 V without…

Physica Status Solidi A (applications and materials science), 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩. ⟨hal-02363323⟩

• Article dans une revue

Concentration-control in all-solution processed semiconducting polymer doping and high conductivity performances

Khaoula Ferchichi, Ramzi Bourguiga, Kamal Lmimouni, Sébastien Pecqueur

Simultaneously optimizing performances, processability and fabrication cost of organic electronic materials is the continual source of compromise hindering the development of disruptive applications. In this work, we identified a strategy to achieve record conductivity values of one of the most…

Synthetic Metals, 2020, 262, pp.116352. ⟨10.1016/j.synthmet.2020.116352⟩. ⟨hal-02509617⟩

• Article dans une revue

A parametric technique for trap characterization in AlGaN/GaN HEMTs

Steven Duffy, Brahim Benbakhti, Wei Zhang, Khaled Ahmeda, Karol Kalna, Mohammed Boucherta, Maghnia Mattalah, Hassane Ouazzani Chahdi, Nour Eddine Bourzgui, Ali Soltani

A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge trapping. Our unique approach investigates charge trapping using both…

IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩. ⟨hal-03142223⟩

• Article dans une revue

Fabrication of superhydrophobic/superoleophilic functionalized reduced graphene oxide/polydopamine/PFDT membrane for efficient oil/water separation

Yuanyuan Cheng, Alexandre Barras, Shixiang Lu, Wenguo Xu, Sabine Szunerits, Rabah Boukherroub

Separation and Purification Technology, 2020, 236, pp.116240. ⟨10.1016/j.seppur.2019.116240⟩. ⟨hal-03090045⟩

• Article dans une revue

Are CNNs reliable enough for critical applications? An exploratory study

Mohamed Ayoub Neggaz, Ihsen Alouani, Smail Niar, Fadi Kurdahi

Resource-constrained CNN implementations are subject to various reliability threats. This article provides an exploratory study investigating the impact of faults (soft errors modeled as bit flips) across the parameters of CNNs and the impact on the CNN weights, which can be used to create…

IEEE Design & Test, 2020, 37 (2), pp.76-83. ⟨10.1109/MDAT.2019.2952336⟩. ⟨hal-03321520⟩

• Article dans une revue

Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet, Luan Nguyen, Marie Lesecq, N. Defrance, Maxime Garcia Barros, Rémi Comyn, Thi Huong Ngo, Marcin Zielinski, Marc Portail, Jean-Claude de Jaeger, Yvon Cordier

Herein, the interest of cubic silicon carbide as a template for the growth of AlGaN/ GaN high electron mobility transistor (HEMT) heterostructures on silicon substrates for high-frequency operation is shown. On the one hand, 0.6-0.8 μm-thick 3C-SiC grown by chemical vapor deposition on intrinsic…

Physica Status Solidi A (applications and materials science), 2020, 217 (7), pp.1900760. ⟨10.1002/pssa.201900760⟩. ⟨hal-02929058⟩

• Article dans une revue

Covert Capacity of Non-Coherent Rayleigh-Fading Channels

Mehrdad Tahmasbi, Anne Savard, Matthieu Bloch

The covert capacity is characterized for a non-coherent fast Rayleigh-fading wireless channel, in which a legitimate user wishes to communicate reliably with a legitimate receiver while escaping detection from a warden. It is shown that the covert capacity is achieved with an amplitude-constrained…

IEEE Transactions on Information Theory, 2020, 66 (4), pp.1979-2005. ⟨10.1109/TIT.2019.2956489⟩. ⟨hal-02441829⟩

• Article dans une revue

Joint channel estimation and data detection for OFDM based cooperative system

Mokhtar Besseghier, Ahmed Bouzidi Djebbar, Abdelhak Zouggaret, Iyad Dayoub

Orthogonal frequency division multiplexing based cooperative system using Alamouti space–time block coding at relay node represents an alternative solution to achieve better connectivity and significant enhancement to the data rate in wireless fading channels. But, these advantages cannot be…

Telecommunication Systems, 2020, 73 (4), pp.545-556. ⟨10.1007/s11235-019-00622-3⟩. ⟨hal-03382877⟩