Publications

• Communication dans un congrès

Réalisation d’une cellule en verre nanostructurée en HSQ. Infiltration par une vapeur de Césium. Application de physique fondamentale

Yves Deblock, Pascal Tilmant, Anne-Sophie Vaillard, Christophe Boyaval, Saliha Ouendi, Mélanie Brouillard, James Elegbe

2025 Renatech+ Lithography and Etching Days, Jun 2025, Palaiseau, France. ⟨hal-05313283⟩

• Communication dans un congrès

Electron beam lithography tests on EM Resist’s new 32%-HSQ resist formulation

Yves Deblock, Pascal Tilmant, Anne-Sophie Vaillard, Christophe Boyaval, Saliha Ouendi, Mélanie Brouillard, James Elegbe

2025 Renatech+ Lithography and Etching Days, Jun 2025, Palaiseau, France. ⟨hal-05308260⟩

• Communication dans un congrès

Analysis of PAPR-Aware OFDM Waveforms for Integrated Sensing and Communication

Eya Gourar, Yahia Medjahdi, Laurent Clavier, Abdul Karim Gizzini

This paper addresses the peak-to-average power ratio (PAPR) reduction of Orthogonal Frequency Division Multiplexing (OFDM) waveforms under unit modulus constraint for Integrated Sensing and Communication systems (ISAC). We conduct a comparative analysis of radar and communication performance for…

2025 IEEE 101st Vehicular Technology Conference (VTC2025-Spring), Jun 2025, Oslo, Norway. ⟨hal-05265250⟩

• Thèse

Development of barium-based functional materials for nanophotonics: application to tunable terahertz metasurfaces, Développement de matériaux fonctionnels à base de baryum pour la nanophotonique : application pour métasurfaces térahertz reconfigurable

Nour Al Meselmene

Barium-based functional thin films, particularly barium titanate (BTO) and barium strontium titanate (BST), are well known for their strong electro-optic (EO) properties and voltage-dependent permittivity. While their performance has been widely explored in the optical and microwave regions, their…, Les couches minces fonctionnelles à base de baryum, en particulier le titanate de baryum (BTO) et le titanate de baryum-strontium (BST), sont bien connues pour leurs fortes propriétés électro-optiques (EO) et leur permittivité dépendante de la tension. Bien que leurs performances aient été…

Electronics. Université Polytechnique Hauts-de-France; Institut national des sciences appliquées Hauts-de-France, 2025. English. ⟨NNT : 2025UPHF0012⟩. ⟨tel-05139714⟩

• Poster de conférence

Alternative and low-cost technique to transfer III-V DHBT transistors onto Si-HR using Cu-Cu bonding for sub-THz power amplification for 6G

Jihed Derouiche, Abdelmalek Zemour, Malek Zegaoui, Yannick Roelens, Pascal Chevalier, Mohammed Zaknoune

This study introduces the preparation of a future transferred InP double heterojunction bipolar transistor (DHBT) on a high-resistivity silicon substrate. Our approach employs copper (Cu) as a thermal heat sink and chosen for its excellent thermal conductivity, which will make possible efficient…

WOCSDICE - EXMATEC 2025, Jun 2025, Cádiz, Spain. ⟨hal-05186867⟩

• Article dans une revue

Optical signatures of no-slip rotation in liquid films: Spiral fringes and frame permittivity effects

Saifollah Rasouli, Reza Shirsavar, Saeid Mollaei, Behnam Shirsavar, Ammar Nejati, Ahmad Amjadi

<div xmlns="http://www.tei-c.org/ns/1.0"><p>Since the discovery of controlled rotation in soap films under electric fields in 2009, the rotation of suspended liquid films has drawn attention across disciplines. While prior studies identified surface charge as a primary driver-…

AIP Advances, 2025, 15, ⟨10.1063/5.0247527⟩. ⟨hal-05158607⟩

• Communication dans un congrès

Development of ScAlN/GaN High Electron Mobility Transistor on silicon substrate for RF applications

Seif El Whibi, Nagesh Bhat, Yassine Fouzi, N. Defrance, Zahia Bougrioua, Jean-Claude de Jaeger, Florian Bartoli, Maxime Hugues, Yvon Cordier, Marie Lesecq

In this work, a 7 nm ScAlN barrier GaN High Electron Mobility Transistor (HEMT) structure is grown on silicon (111) substrate by ammonia-source molecular beam epitaxy (NH3-MBE). On 75 nm T-shaped gate transistor, a saturated current density of 1.35 A/mm at a gate bias of 0V and a transconductance…

Wocsdice Exmatec 2025, Jun 2025, Cadiz, Spain. ⟨hal-05467212⟩

• Communication dans un congrès

Influence of Growth Temperature and Scandium Concentration on the Surface Oxidation of ScAlN Films Grown by Molecular Beam Epitaxy

Valentina Gallardo-Mödinger, Frédéric Georgi, Ileana Florea, Xavier Wallart, Philippe Vennéguès, Yvon Cordier, Maxime Hugues

Recently, there has been a large interest in the ScAlN alloy, thanks to its various applications in high-frequency highpower, acoustoelectric, and ferroelectric devices. Nonetheless, these applications could be impaired by defects present in the ScAlN alloy, such as oxygen impurities, a very…

Wocsdice Exmatec 2025, Jun 2025, Cadiz, Spain. ⟨hal-05168319⟩

• Communication dans un congrès

13 mW/μm² and 24 % PAE at 94 GHz for 0.44-μm Transferred InP/GaAsSb DHBT on Si

Abdelmalek Zemour, Malek Zegaoui, Yannick Roelens, Etienne Okada, Pascal Chevalier, Mohammed Zaknoune

<div><p>We present large-signal load-pull measurements of a transferred InP/GaAsSb double heterojunction bipolar transistor fabricated on a high-resistivity silicon substrate. The tested devices feature an emitter area of 0.44 × 3.9 µm². When biased for highest power, an output power of…

48th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 19th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2025, Cadix, Spain. ⟨hal-05145160⟩

• Communication dans un congrès

Co-Integration of High-Frequency Devices on Epitaxial ScAlN for Tunable RF SAW Filters

Nagesh Bhat, Seif El Whibi, Edouard Lebouvier, N. Defrance, Jean-Claude de Jaeger, Zahia Bougrioua, Florian Bartoli, Valentina Gallardo-Mödinger, Maxime Hugues, Yvon Cordier, Sami Hage-Ali, Ulrich Youbi, Thierry Aubert, Omar Elmazria, Marie Lesecq

With the rise of 6G and growing data demands, high performance materials for RF components are essential. Scandium-doped aluminum nitride (ScAlN) offers a promising barrier layer for next-generation high electron mobility transistors (HEMTs), providing enhanced carrier density. This piezoelectric…

Wocsdice Exmatec 2025, Jun 2025, Cadiz, Spain. ⟨hal-05467164⟩