Publications

• Article dans une revue

Frequency response optimization of P-I-N photodiode based on InGaAsN lattice matched to GaAs for High-Speed photodetection applications

R. Amraoui, Abdelkader Aissat, Jean-Pierre Vilcot, Didier Decoster

This paper reports on pin photodiode frequency response optimization based on InxGa1-xAs1-yNy quaternary lattice matched to GaAs. Two transparent layers are placed on p-side and n-side in order to manage the photodiode frequency response limitations. The lattice matching condition is calculated in…

Optics and Laser Technology, 2022, 145, pp.107468. ⟨10.1016/j.optlastec.2021.107468⟩. ⟨hal-03549621⟩

• Article dans une revue

Spectrum Sensing Using Software Defined Radio for Cognitive Radio Networks: A Survey

Julio Manco-Vasquez, Iyad Dayoub, Amor Nafkha, Mohammad Alibakhshikenari, Hayfa Ben Thameur

Cognitive radio (CR) network has emerged as a potential solution to the under-utilization problem of the allocated radio spectrum, where spectrum sensing (SS) plays a key role to enable the coexistence between primary and secondary users. It has attracted research interests, and several works have…

IEEE Access, 2022, 10, pp.131887-131908. ⟨10.1109/ACCESS.2022.3229739⟩. ⟨hal-03926173⟩

• Article dans une revue

Transport Properties of Methyl-Terminated Germanane Microcrystallites

Davide Sciacca, Maxime Berthe, Bradley Ryan, Nemanja Peric, D. Deresmes, Louis Biadala, Christophe Boyaval, Ahmed Addad, Ophélie Lancry, Raghda Makarem, Sébastien Legendre, Didier Hocrelle, Matthew Panthani, Geoffroy Prévot, Emmanuel Lhuillier, Pascale Diener, B. Grandidier

Germanane is a two-dimensional material consisting of stacks of atomically thin germanium sheets. It’s easy and low-cost synthesis holds promise for the development of atomic-scale devices. However, to become an electronic-grade material, high-quality layered crystals with good chemical purity and…

Nanomaterials, 2022, 12 (7), pp.1128. ⟨10.3390/nano12071128⟩. ⟨hal-03634314⟩

• Article dans une revue

A comparison of pad metallization in miniaturized microfabricated silicon microcantilever-based wafer probes for low contact force low skate on-wafer measurements

Khadim Daffe, Jaouad Marzouk, Christophe Boyaval, Gilles Dambrine, Kamel Haddadi, S. Arscott

Miniaturized, microfabricated microelectromechanical systems (MEMS)-based wafer probes are used here to evaluate different contact pad metallization at low tip forces (<mN) and low skate on the on-wafer pads. The target application is low force RF probes for on-wafer measurements which cause…

Journal of Micromechanics and Microengineering, 2022, 32 (1), pp.015007. ⟨10.1088/1361-6439/ac3cd7⟩. ⟨hal-03449369⟩

• Communication dans un congrès

Face Sketch Synthesis using Generative Adversarial Networks

Mahfoud Sami, Daamouche Abdelhamid, Bengherabi Messaoud, Boutellaa Elhocine, Abdenour Hadid

Face Sketch Synthesis is crucial for a wide range of practical applications, including digital entertainment and law enforcement. Recent approaches based on Generative Adversarial Networks (GANs) have shown compelling results in image-to-image translation as well as face photo-sketch synthesis.…

TAMARICS, 2022, Tamanrasset, Algeria. ⟨hal-03957088⟩

• Article dans une revue

Unstationary dynamics of drops subjected to MHz-surface acoustic waves modulated at low frequency

Philippe Brunet, Michael Baudoin

In the present work, we investigate the unstationary dynamics of sessile droplets subjected to high-frequency surface acoustic waves modulated at a lower frequency close to the first inertio-capillary resonance mode of the drop. Under the action of both acoustic streaming and radiation pressure,…

Experiments in Fluids, 2022, 63 (1), pp.34. ⟨10.1007/s00348-021-03365-7⟩. ⟨hal-03596906⟩

• Article dans une revue

CRC-Based Correction of Multiple Errors Using an Optimized Lookup Table

Vivien Boussard, Stephane Coulombe, François-Xavier Coudoux, Patrick Corlay

In this paper, we propose a new approach to perform multiple error correction in wireless communications over error-prone networks. It is based on the cyclic redundancy check syndrome, using an optimized lookup table that avoids performing arithmetic operations. This method is able to achieve the…

IEEE Access, 2022, 10, pp.23931-23947. ⟨10.1109/ACCESS.2022.3155457⟩. ⟨hal-03664661⟩

• Communication dans un congrès

High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures

Idriss Abid, Youssef Hamdaoui, Jash Mehta, F Medjdoub

In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off configuration was achieved by means of a p-gallium nitride (p-GaN) cap layer…

• Article dans une revue

Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

Caroline Maye, Sylvie Lepilliet, Etienne Okada, Marc Margalef-Rovira, Issa Alaji, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière

This article aims to discuss challenges and performances of a passive load-pull test bench dedicated to the G-band frequencies. The first task of this work is the development of the setup to perform high power generation, impedance generation, and high-power dynamic of measurement. The solution…

IEEE Transactions on Microwave Theory and Techniques, 2022, 70 (1), pp 444-452. ⟨10.1109/TMTT.2021.3111170⟩. ⟨hal-03507882⟩

• Article dans une revue

Towards Outdoor Electromagnetic Field Exposure Mapping Generation Using Conditional GANs

Mohammed Mallik, Angesom Ataklity Tesfay, Benjamin Allaert, Rédha Kassi, Esteban Egea-Lopez, Jose-Maria Molina-Garcia-Pardo, Joe Wiart, Davy Gaillot, Laurent Clavier

With the ongoing fifth-generation cellular network (5G) deployment, electromagnetic field exposure has become a critical concern. However, measurements are scarce, and accurate electromagnetic field reconstruction in a geographic region remains challenging. This work proposes a conditional…

Sensors, 2022, 22 (24), pp.9643. ⟨10.3390/s22249643⟩. ⟨hal-03919067⟩