Publications

• Communication dans un congrès

On 2D/3D numerical oxidation modeling : calibration and investigation of silicon crystal orientation effect on stresses in shallow trench isolations

T. Hoffmann, K.F. Dombrowski, V. Senez

2000, pp.59-62. ⟨hal-00158513⟩

• Article dans une revue

Evaluation of niobium effects on the longitudinal piezoelectric coefficients of Pb(Zr, Ti)O-3 thin films

T. Haccart, Eric Cattan, Denis Remiens, S. Hiboux, P. Muralt

Applied Physics Letters, 2000, 76, pp.3292-3294. ⟨hal-00158542⟩

• Autre publication scientifique

Structure électronique et propriétés thermoélectriques des skudttérudites

M. Lassalle

2000. ⟨hal-00158639⟩

• Article dans une revue

Nature of impurity states in doped amorphous silicon

Guy Allan, Christophe Delerue, Michel Lannoo

We calculate the electronic structure of doped amorphous silicon in a tight-binding framework. Substitutional impurities are randomly introduced at fourfold-coordinated sites of a previously published model of a-Si:H. Our most important result is that single impurities have much larger binding…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.10206-10210. ⟨10.1103/PhysRevB.61.10206⟩. ⟨hal-00158663⟩

• Communication dans un congrès

Optical to millimeter-waves transducers

Jean-Pierre Vilcot

Microwave Photonic Devices and Systems, 2000, Grasmere, France. ⟨hal-00158621⟩

• Article dans une revue

An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs

J.S. Goo, C.H. Choi, Francois Danneville, E. Morifuji, H.S. Momose, Z. Yu, H. Iwai, T.H. Lee, R.W. Dutton

IEEE Transactions on Electron Devices, 2000, 47, pp.2410-2419. ⟨hal-00157860⟩

• Communication dans un congrès

An ultra high switching frequency step-down DC-DC converter based on gallium arsenide devices

Mamadou Gaye, Sami Ajram, Paul Maynadier, Georges Salmer

A 50MHz to 100MHz dc-dc power converter using Gallium Arsenide power switches is studied. GaAs Schottky rectifiers with high breakdown voltage and very small Ron x Con switching quality factor have been fabricated. A 10V to 5V (or 8V) prototype with an output power of 2.6Watts and a power…

_, 2000, _, France. 4 pp. ⟨hal-00157875⟩

• Article dans une revue

The indium content in metamorphic InAlAs/InGaAs HEMTs on GaAs substrate : a new structure parameter

S. Bollaert, Y. Cordier, M. Zaknoune, H. Happy, Virginie Hoel, Sylvie Lepilliet, D. Theron, A. Cappy

Solid-State Electronics, 2000, 44, pp.1021-1027. ⟨hal-00157879⟩

• Autre publication scientifique

Conception et réalisation d'une source stable programmable en intégration monolithique, en bande K

P. Lefevre

2000. ⟨hal-00157899⟩

• Communication dans un congrès

Effects of substrate preparation on properties of YBaCuO thin films

A. Dégardin, X. Castel, M. Achani, Maryline Guilloux-Viry, E. Caristan, Yannick Roelens, J.C. Carru, A. Perrin, A. Kreisler

2000, pp.1993-1994. ⟨hal-00157906⟩