Publications

• Article dans une revue

Static measurements of GaN MESFETs on (111) Si substrates

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

For the first time, to the knowledge of the authors, GaN MESFETs on silicon substrate have been realised using low-pressure metal-organic vapour phase epitaxy. The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm…

Electronics Letters, 2001, 37 (17), pp.1095 - 1096. ⟨10.1049/el:20010740⟩. ⟨hal-02936047⟩

• Communication dans un congrès

S. Carnot’s Réflexions: a theory based on non–classical Logic

Raffaele Pisano

International ASL Logic Colloquium 2001, Wien, 6–11 August, Association for Symbolic Logic, Aug 2001, Wien, Austria, Austria. ⟨hal-04519710⟩

• Article dans une revue

Theory of electrical rectification in a molecular monolayer

Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, R. Metzger

The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q-3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight binding techniques. The rectification current depends on the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64 (8), pp.085405. ⟨10.1103/PhysRevB.64.085405⟩. ⟨hal-00604397⟩

• Article dans une revue

Theory of electrical rectification in a molecular monolayer

Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, Robert M Metzger

The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q−3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight-binding techniques. The rectification current depends not only on…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, pp.085405/1-6. ⟨10.1103/PhysRevB.64.085405⟩. ⟨hal-00152558⟩

• Proceedings/Recueil des communications

Photonic tunneling between two wires

Leonard Dobrzynski

Progress in Surface Science, 67 (1-8), pp.347-354, 2001, ⟨10.1016/S0079-6816(01)00035-1⟩. ⟨hal-04070883⟩

• Article dans une revue

Surface states in one-dimensional photonic band gap structures

B Djafari-Rouhani, E.H El Boudouti, Abdellatif Akjouj, Leonard Dobrzynski, J.O Vasseur, A Mir, N Fettouhi, J Zemmouri

Vacuum, 2001, 63 (1-2), pp.177-183. ⟨10.1016/S0042-207X(01)00188-9⟩. ⟨hal-04069889⟩

• Communication dans un congrès

Sadi Carnot’s Thermodynamics and Electricity Theory

Raffaele Pisano

XXI SISFA International Congress of the history of physics and Astronomy, 7-9 June, SISFA & Department of Physics, University of Calabria, Jun 2001, Cosenza, Italy. ⟨hal-04519716⟩

• Article dans une revue

Tight binding description of the electronic response of a molecular device to an applied voltage

Christophe Krzeminski, Christophe Delerue, Guy Allan

We analyze the effect of an external electric field on the electronic structure of molecules which have been recently studied as molecular wires or diodes. We use a self-consistent tight binding technique which provides results in good agreement with ab initio calculations and which may be applied…

Journal of Physical Chemistry B, 2001, 105 (27), pp.6321. ⟨10.1021/jp011263y⟩. ⟨hal-00604398⟩

• Communication dans un congrès

FDTD modeling on high performance vector/parallel computers. Application to the analysis of millimeter wave printed antennas and focusing devices

Ronan Sauleau, Christophe Guiffaut, Philippe Coquet, Kouroch Mahdjoubi, J.P. Daniel

8th International Conference on Advances in Communications and Control, COMCON8, Telecommunications/Signal Processing, Jun 2001, Greece. 329-347 - 19 p. ⟨hal-00557676⟩

• Article dans une revue

A 0.15µm 60GHz high-power composite channel GaInAs/InP HEMT with low gate current

Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron

This letter presents recent improvements and experimental results provided by GaInAs/InP composite channel high electron mobility transistors (HEMT). The devices exhibit good dc and rf performance. The 0.15-μm gate length devices have saturation current density of 750 mA/mm at V/sub GS/=+0 V. The…

IEEE Electron Device Letters, 2001, 22 (6), pp.257-259. ⟨10.1109/55.924834⟩. ⟨hal-00152592⟩