Publications

Affichage de 14941 à 14950 sur 16278


  • Chapitre d'ouvrage

Noise modeling and measurement techniques in deep submicron SOI devices

Francois Danneville, Gilles Dambrine

Balandin A. Noise and Fluctuations Control in Electronic Devices, American Scientific Publishers, pp.355-365, 2002. ⟨hal-00577023⟩

  • Chapitre d'ouvrage

Growth of PbTiO3/Pb[Zr,Ti]O-3 heterostructures by sputtering on Si substrate : influence of a buffer layer on the structural and electrical properties of Pb[Zr,Ti]O-3

Denis Remiens

Pandalai S.G. Crystal growth in thin solid films - Control of epitaxy, Research Signpost, Kerala, India, pp.71-86, 2002. ⟨hal-00577027⟩

  • Communication dans un congrès

0.12µm gate length In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar, J. Mateos

2002, pp.101-105. ⟨hal-00152950⟩

  • Article dans une revue

Univariant assessment of the quality of images

M. Jung, D. Leger, Marc G. Gazalet

Journal of Electronic Imaging, 2002, 11, pp.354-364. ⟨hal-00149735⟩

  • Communication dans un congrès

Reliability of GaN based devices

G. Meneghesso, Christophe Gaquière, E. Zanoni

Proceedings of the 2002 European Microwave Week, 2002, Milano, Italy. ⟨hal-00149728⟩

  • Article dans une revue

Characterization of mems devices using a polarisation interferometer

D. Jenkins, W. Clegg, X. Liu, E. Fribourg-Blanc, Eric Cattan

Integrated Ferroelectrics, 2002, 50, pp.91-99. ⟨hal-00149626⟩

  • Article dans une revue

Thick LiNnO3 layers on diamond-coated silicon for surface acoustic wave filters

El Hadj Dogheche, Véronique Sadaune, X. Lansiaux, Denis Remiens, Tadeusz Gryba

Applied Physics Letters, 2002, 81, pp.1329-1331. ⟨hal-00149631⟩

  • Article dans une revue

Bubble size distribution estimation via void rate dissipation in gas saturated liquid. Application to ultrasonic cavitation bubble fields

S. Labouret, J. Frohly

European Physical Journal: Applied Physics, 2002, 19, pp.39-54. ⟨hal-00149903⟩

  • Article dans une revue

Experimental study of hot-electron inelastic scattering rate in p-type InGaAs

D. Sicault, R. Teissier, F. Pardo, J.L. Pelouard, F. Mollot

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, 12, pp.121301. ⟨hal-00018482⟩