Publications

• Communication dans un congrès

Reliability of packaging MEMS in shock environment : crack and stiction modeling

O. Millet, D. Collard, L. Buchaillot

2002, pp.696-703. ⟨hal-00148789⟩

• Article dans une revue

Design production and testing of PMN-PT electrostrictive transducers

J. Coutte, Bertrand Dubus, J.C. Debus, C. Granger, D. Jones

Ultrasonics, 2002, 40, pp.883-888. ⟨hal-00147756⟩

• Article dans une revue

Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373K

Mohamed Boutchich, Katir Ziouche, Pascale Godts, Didier Leclercq

In this paper, thermal properties of phosphorus and boron-doped low pressure chemical vapor deposition (LPCVD) polysilicon layers with regard to sensor applications are presented. Thermoelectric coefficient and relative resistance variations of polysilicon are investigated within the temperature…

IEEE Electron Device Letters, 2002, 23 (3), pp.139-141. ⟨10.1109/55.988817⟩. ⟨hal-00148729⟩

• Autre publication scientifique

Microcapteurs de rayonnement infrarouge en technologie silicium

Mohamed Boutchich

2002. ⟨hal-00148731⟩

• Communication dans un congrès

Emission basse fréquence par interaction non-linéaire d'ondes ultrasonores

Philippe Pernod, Y. Pylnov, Vladimir Preobrazhensky

Actes du 6ème Congrès Français d'Acoustique, CFA 2002, 2002, Lille, France. ⟨hal-00148704⟩

• Communication dans un congrès

Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology

M. Ardouin, B. Bonte, M. Zaknoune, Y. Cordier, S. Bollaert, D. Theron, Jean-Claude de Jaeger

25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia. ⟨hal-00149713⟩

• Communication dans un congrès

Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer

F Medjdoub, D. Theron, F. Dessenne, R. Fauquembergue, Jean-Claude de Jaeger

2002, pp.57-62. ⟨hal-00149710⟩

• Autre publication scientifique

Stabilité des interactions silicium-hydrogène sous irradiation optique ou électronique dans les semiconducteurs à base de GaAs. Application à la fiabilité et à la nanofabrication de composants III-V

S. Silvestre

2002. ⟨hal-00162706⟩

• Article dans une revue

Photodissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murthag, J.C. Greer, M. Barbe, F. Bailly, Jérome Chevalier, S. Sylvestre, D. Loridant-Bernard, E. Constant, M. Constant

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa–H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-…

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨10.1016/S0168-583X(01)00949-1⟩. ⟨hal-00278930⟩

• Article dans une revue

Microwave technique for detection, location and sizing of buried objects

Latifa Achrait-Furlan, T. Lasri, Ahmed Mamouni

The detection, location, and sizing of immersed objects in a host medium are tasks of interest in many fields. One of the most suitable tools for the noninvasive measurements of buried objects is the use of microwaves. We propose in this paper a microwave method based on the knowledge of the…

Microwave and Optical Technology Letters, 2002, 32 (2), pp.145-149. ⟨10.1002/mop.10115⟩. ⟨hal-00147852⟩