Publications

Affichage de 13441 à 13450 sur 16271


  • Communication dans un congrès

Noise performance at cryogenic temperature of microwave SiGeC low noise amplifier using BiCMOS technology

S. Pruvost, S. Delcourt, Francois Danneville, I. Telliez, Gilles Dambrine, M. Laurens, A. Monroy

2005, pp.509-512. ⟨hal-00125310⟩

  • Communication dans un congrès

THz devices and applications : a survey of recent researchs

Laurent Chusseau, Jean-Francois Lampin, S. Bollaert, L. Duvillaret, J. Mangeney

13th European Gallium Arsenide and other Compound Semiconductors Application Symposium, GAAS, 2005, Paris, France. ⟨hal-00125317⟩

  • Communication dans un congrès

Comparative study of polymer and silica multimode fibre system operating at 850 nm for local area networks

C. Lethien, A. Goffin, Jean-Pierre Vilcot, Christophe Loyez

9th and 10th NERFITITI Workshop MWPI, 2005, Brussels, Belgium. ⟨hal-00125336⟩

  • Communication dans un congrès

InP based ballistic nanodevices

A. Cappy, J.S. Galloo, S. Bollaert, Yannick Roelens, J. Mateos, T. Gonzales, W. Knap

International Conference on Indium Phosphide and Related Materials, IPRM 2005, 2005, Glasgow, Scotland, United Kingdom. ⟨hal-00125316⟩

  • Communication dans un congrès

Temperature effect on the performance of a traveling wave amplifier in 130 nm SOI technology

M. Si Moussa, C. Pavageau, Francois Danneville, J. Russat, N. Fel, J.P. Raskin, D. Vanhoenacker-Janvier

2005, pp.495-498. ⟨hal-00125319⟩

  • Communication dans un congrès

Trends and challenge in micro and nanoelectronics device research in Europe

A. Cappy, Nicolas Wichmann, J.S. Galloo, S. Bollaert, Yannick Roelens, J. Mateos, T. Gonzalez, W. Knap

Topical Workshop on Heterostructure Microelectronics, TWHM 2005, 2005, Hyogo, Japan. ⟨hal-00125339⟩

  • Communication dans un congrès

InP and InAsP channel HEMT for millimeter wave applications

D. Theron, F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière

Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2005, 2005, Miami, FL, United States. ⟨hal-00126470⟩

  • Article dans une revue

Dispersive charge transport along the surface of an insulating layer observed by electrostatic force microscopy

J. Lambert, Loubens G. Dee, C. Guthmann, M. Saint-Jean, Thierry Melin

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71, pp.155418-1-10. ⟨hal-00126247⟩

  • Communication dans un congrès

Performance d'une liaison descendante basée sur le MC-CDMA dans le canal à 60 GHz : comparaison avec l'OFDM-TDMA et le DS-CDMA

H. El Ghazi, C. Garnier, Laurent Clavier, W. Sawaya, Y. Delignon

Actes des 4èmes Journées Franco-Maghrébines des Microondes et leurs Applications, 2005, Rabat, Maroc. ⟨hal-00126739⟩

  • Communication dans un congrès

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hours on-state and off-state hot-electron stress

A. Sozza, C. Dua, E. Morvan, M.A. Poisson, S. Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G. Meneghesso, E. Zanoni, A. Curutchet, N. Malbert, N. Labat, B. Grimbert, Jean-Claude de Jaeger

2005, 4 pp. ⟨hal-00126762⟩