Publications

• Communication dans un congrès

CardioSense3D: Patient-Specific Cardiac Simulation

Hervé Delingette, Maxime Sermesant, Jean-Marc Peyrat, Nicholas Ayache, Kawal S. Rhode, Reza Razavi, Elliot R. Mcveigh, Dominique Chapelle, Jacques Sainte-Marie, Philippe Moireau, Miguel Angel Fernández, Jean-Frédéric Gerbeau, K. Djabella, Q. Zhang, Michel Sorine

no abstract

Proceedings of IEEE International Conference on Biomedical Imaging: From Nano to Macro (ISBI'07), 2007, Metro Washington DC, USA, United States. pp.628-631. ⟨inria-00616052⟩

• Article dans une revue

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennegues, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. Leroux

New conditions for one‐step ELO were implemented to grow coalesced (11equation image0) non‐polar and (11equation image2) semi‐polar GaN layers starting, respectively, from R ‐ and M ‐plane sapphire. A great part of the stacking faults (SFs) and dislocations are filtrated resulting in GaN material…

Physica Status Solidi A (applications and materials science), 2007, 204 (1), pp.282-289. ⟨10.1002/pssa.200673585⟩. ⟨hal-02906717⟩

• Article dans une revue

CVD growth of carbon nanotubes at very low pressure of acetylene

Yu.A. Kasumov, A. Shailos, I.I. Khodos, V.T. Volkov, V.I. Levashov, V.N. Matveev, Sophie Guéron, Mathias Kobylko, Mathieu Kociak, Helene Bouchiat, Vincent Agache, Anne-Sophie Rollier, Lionel Buchaillot, Anne Marie Bonnot, A.Yu. Kasumov

We present a new technique for CVD synthesis of carbon nanotubes without any gas flow and using a very low pressure of acetylene (down to 0.5 mbar). The good quality of obtained nanotubes is confirmed by TEM observation and electron diffraction patterns, Raman spectroscopy and electron transport…

Applied physics. A, Materials science & processing, 2007, 88, pp.687-691. ⟨10.1007/s00339-007-4028-3⟩. ⟨hal-00351737⟩

• Communication dans un congrès

The metamaterial emerging technology : the Network of Excellence METAMORPHOSE

D. Lippens, S. Tretyakov

31th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2007, 2007, Venice, Italy. ⟨hal-00286297⟩

• Communication dans un congrès

Experimental observation of nonlinear self-focusing in the cavitation field

C. Campos-Pozuelo, C. Vanhille, Bertrand Dubus

19th International Congress on Acoustics, ICA 2007, 2007, Madrid, Spain. ⟨hal-00286232⟩

• Communication dans un congrès

Impact of interfaces on the dynamic electrical properties of molecular junctions

D. Vuillaume

Princeton Discussions on Organic Materials, Interfaces and Devices, 2007, Princeton, NJ, United States. ⟨hal-00286362⟩

• Communication dans un congrès

MMMS microvalve based on a mechanical instability for active flow control

Philippe Pernod, Vladimir Preobrazhensky, A. Merlen, O. Ducloux, Abdelkrim Talbi, L. Gimeno, R. Viard, Nicolas Tiercelin

42ème Colloque d'Aérodynamique Appliquée : couplages et optimisation multidisciplinaires, 2007, Nice, France. ⟨hal-00286342⟩

• Communication dans un congrès

Picosecond ultrasonics as a helpful technique for introducing a new electrode material in BAW technology : the iridium case

Arnaud Devos, J. Olivares, M. Clement, E. Iborra, S. Gonzalez-Castilla, N. Rimmer, A. Rastogi

IEEE International Ultrasonics Symposium, 2007, United States. pp.1433-1436, ⟨10.1109/ULTSYM.2007.360⟩. ⟨hal-00283997⟩

• Article dans une revue

X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Nicolas Sarazin, Olivier Jardel, Erwan Morvan, Raphaël Aubry, M. Laurent, M. Magis, Maurice Tordjman, M. Alloui, O. Drisse, J. Di Persio, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage, Nicolas Vellas, Christophe Gaquière, Didier Theron

AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an output power of 6.8 W/mm at 10 GHz with a gate length of 0.25 µm. A good…

Electronics Letters, 2007, 43 (23), pp.1317-1318. ⟨10.1049/el:20072598⟩. ⟨hal-00283494⟩

• Article dans une revue

Raman imaging of graphene

D. Graf, F. Molitor, K. Ensslin, C. Stampfer, A. Jungen, C. Hierold, L. Wirtz

Solid State Communications, 2007, 143, pp.44-46. ⟨10.1016/j.ssc.2007.01.050⟩. ⟨hal-00283157⟩