Publications

• Article dans une revue

Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors

C. Celle, C. Suspene, J.P. Simonato, S. Lenfant, M. Ternisien, D. Vuillaume

Organic Electronics, 2009, 10, pp.119-126. ⟨10.1016/j.orgel.2008.10.007⟩. ⟨hal-00472766⟩

• Article dans une revue

Novel bondpad report process for III-V semiconductor devices using full HSQ properties

Malek Zegaoui, Nargess Choueib, P. Tilmant, Marc François, Christiane Legrand, Jean Chazelas, Didier Decoster

This paper reports on an easy and quick planarization and passivation technique of III-V compound semiconductor compatible with nanoscale devices. Vertical etching requires good sidewalls passivation to reduce drastically the leakage current and to obtain a good planarization of the devices for…

Microelectronic Engineering, 2009, 86 (1), pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩. ⟨hal-00473043⟩

• Article dans une revue

Recent progress in high-speed silicon-based optical modulators [Invited paper]

D. Marris-Morini, L. Vivien, G. Rasigade, J.M. Fedeli, E. Cassan, Xavier Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, Mathieu Halbwax, S. Laval

Proceedings of the IEEE, 2009, 97, pp.1199-1215. ⟨10.1109/JPROC.2009.2015337⟩. ⟨hal-00473046⟩

• Article dans une revue

Multi-service applications on high modal bandwidth glass multimode fiber

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, P.A. Rolland

Electronics Letters, 2009, 45, pp.951-952. ⟨10.1049/el.2009.1584⟩. ⟨hal-00471848⟩

• Article dans une revue

Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

V.G. Dubrovskii, N.V. Sibirev, G.E. Cirlin, I.P. Soshnikov, W.H. Chen, R. Larde, E. Cadel, P. Pareige, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, M. Moewe, L.C. Chuang, C. Chang-Hasnain

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.205316-1-7. ⟨10.1103/PhysRevB.79.205316⟩. ⟨hal-00473095⟩

• Article dans une revue

Gate-recess technology for InAs/AlSb HEMTs

E. Lefebvre, M. Malmkvist, M. Borg, L. Desplanque, X. Wallart, Gilles Dambrine, S. Bollaert, J. Grahn

IEEE Transactions on Electron Devices, 2009, 56, pp.1904-1911. ⟨10.1109/TED.2009.2026123⟩. ⟨hal-00471908⟩

• Article dans une revue

A 60 GHz six-port distance measurement system with sub-millimeter accuracy

Kamel Haddadi, M.M. Wang, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2009, 19, pp.644-646. ⟨10.1109/LMWC.2009.2029744⟩. ⟨hal-00472454⟩

• Article dans une revue

Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI

G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, N. Breil, Olivier Faynot

As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As$^+$) implantation.…

IEEE Electron Device Letters, 2009, 30 (12), pp.1266-1268. ⟨10.1109/LED.2009.2033085⟩. ⟨hal-00471974⟩

• Article dans une revue

To grate a liquid into tiny droplets by its impact on a hydrophobic microgrid

P. Brunet, F. Lapierre, Farzam Zoueshtiagh, V. Thomy, A. Merlen

We report on experiments of drop impacting a hydrophobic micro-grid, of typical spacing a few tens of µm. Above a threshold in impact speed, liquid emerges to the other side, forming microdroplets of size about that of the grid holes. We propose a method to produce either a mono-disperse spray or a…

Applied Physics Letters, 2009, 95 (25), pp.254102. ⟨10.1063/1.3275709⟩. ⟨hal-00469669⟩

• Communication dans un congrès

Threshold voltage control by self-assembled monoayers gate dielectric functionalization in both polymer an small molecule field effect transistors

M. Ternisien, C. Celle, C. Suspène, J.P. Simonato, S. Lenfant, K. Lmimouni, D. Vuillaume

10th European Conference on Molecular Electronics, ECME 2009, 2009, Copenhagen, Denmark. ⟨hal-00575265⟩